ZHCSIV1G September 2018 – April 2026 TPS1663
PRODUCTION DATA
| 参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | |
|---|---|---|---|---|---|---|
| 电源电压 | ||||||
| V(IN)、V(P_IN) | 工作输入电压 | 4.5 | 60 | V | ||
| IQ(ON) | 电源电流 | 启用: V(SHDN) = 2V | 1.38 | 1.7 | mA | |
| IQ(OFF) | V(SHDN) = 0V | 21 | 60 | µA | ||
| V(OVC) | 过压钳位 | 仅限 TPS16632,V(IN) > 40V,I(OUT) = 1mA | 35.7 | 36.6 | 39 | V |
| 欠压锁定 (UVLO) 输入 | ||||||
| V(UVLOR) | UVLO 阈值电压,上升 | 1.176 | 1.2 | 1.224 | V | |
| V(UVLOF) | UVLO 阈值电压,下降 | 1.09 | 1.122 | 1.15 | V | |
| I(UVLO) | UVLO 输入漏电流 | 0V ≤ V(UVLO) ≤ 60V | -150 | 8 | 150 | nA |
| 过压保护 (OVP) 输入 | ||||||
| V(OVPR) | 上升时的过压阈值 | 1.176 | 1.2 | 1.224 | V | |
| V(OVPF) | 下降时的过压阈值 | 1.09 | 1.122 | 1.15 | V | |
| I(OVP) | OVP 输入漏电流 | 0V ≤ V(OVP) ≤ 4V | -150 | 0 | 150 | nA |
| 电流限制编程 (ILIM) | ||||||
| I(OL) | 过载电流限制 | R(ILIM)= 30kΩ,V(IN) – V(OUT) = 1V | 0.54 | 0.6 | 0.66 | A |
| R(ILIM) = 9kΩ,V(IN) – V(OUT) = 1V | 1.84 | 2 | 2.16 | A | ||
| R(ILIM) = 4.02kΩ,V(IN) – V(OUT) = 1V | 4.185 | 4.5 | 4.815 | A | ||
| R(ILIM) = 3kΩ,V(IN) – V(OUT) = 1V | 5.58 | 6 | 6.42 | A | ||
| I(FASTRIP) | 快速跳变比较器阈值 | 2xI(OL) | A | |||
| I(SCP) | 短路保护电流 | 45 | A | |||
| 输出功率限制控制 (PLIM) 输入 ——仅限 TPS16632 和 TPS16637 | ||||||
| V(SEL_PLIM) | 功率限制特性选择阈值 | 180 | 210 | 240 | mV | |
| I(PLIM) | PLIM 拉电流 | V(PLIM) = 0V | 4.4 | 5.02 | 5.6 | µA |
| P(PLIM) | 最大输出功率 | R(PLIM) = 100kΩ | 94 | 100 | 106 | W |
| R(PLIM) = 150kΩ (1) | 141.9 | 151 | 160.1 | W | ||
| P(PLIM) | 最大输出功率 | R(PLIM) = 100kΩ,VIN = 54V,TPS16637 | 100 | W | ||
| 导通 FET 输出 (OUT) | ||||||
| RON | IN 至 OUT 总导通电阻 | 0.6A ≤ I(OUT) ≤ 6A,TJ = 25°C | 26 | 30.44 | 34.5 | mΩ |
| RON | IN 至 OUT 总导通电阻 | 0.6A ≤ I(OUT) ≤ 6A,TJ = 85°C | 33 | 45 | mΩ | |
| RON | IN 至 OUT 总导通电阻 | 0.6A ≤ I(OUT) ≤ 6A,–40°C ≤ TJ ≤ +125°C | 19 | 30.44 | 53 | mΩ |
| 输出斜坡控制 (dVdT) | ||||||
| I(dVdT) | dVdT 充电电流 | V(dVdT) = 0V | 1.775 | 2 | 2.225 | µA |
| GAIN(dVdT) | dVdT 至 OUT 增益 | V(OUT)/V(dVdT) | 23.5 | 25 | 26 | V/V |
| V(dVdTmax) | dVdT 最大电容器电压 | 3.8 | 4.17 | 4.75 | V | |
| R(dVdT) | dVdT 放电电阻 | 10 | 16.6 | 26.6 | Ω | |
| 电流监测器输出 (IMON) | ||||||
| GAIN(IMON) | 增益系数 I(IMON):I(OUT) | 0.6A ≤ I(OUT) < 2A | 25.66 | 27.9 | 30.14 | µA/A |
| 2A ≤ I(OUT) ≤ 6A | 26.22 | 27.9 | 29.58 | µA/A | ||
| 低 IQ 关断 (SHDN) 输入 | ||||||
| V(SHDN) | 开路电压 | I(SHDN) = 0.1µA | 2.48 | 2.7 | 3.3 | V |
| V(SHUTF) | 低 IQ 关断 SHDN 阈值电压,下降 | 0.8 | V | |||
| V(SHUTR) | 上升时的 SHDN 阈值 | 2 | V | |||
| I(SHDN) | 漏电流 | V(SHDN) = 0V | -10 | µA | ||
| 故障标志 (FLT):低电平有效 | ||||||
| R(FLT) | FLT 下拉电阻 | 36 | 70 | 130 | Ω | |
| I(FLT) | FLT 输入漏电流 | 0V ≤ V(FLT) ≤ 60V | -150 | 6 | 150 | nA |
| 电源正常 (PGOOD) | ||||||
| R(PGOOD) | PGOOD 下拉电阻 | 36 | 70 | 130 | Ω | |
| I(PGOOD) | PGOOD 输入漏电流 | 0V ≤ V(PGOOD) ≤ 60V | -150 | 6 | 150 | nA |
| 热保护 | ||||||
| T(J_REG) | 热调节设定点 | 136 | 145 | 154 | ºC | |
| T(TSD) | 上升时的热关断 (TSD) 阈值 | 165 | ºC | |||
| T(TSDhyst) | TSD 迟滞 | 11 | ºC | |||
| 模式 | ||||||
| MODE_SEL | 模式选择 | MODE = 开路 | 锁存 | |||
| MODE = 对 GND 短路 | 自动 — 重试 | |||||