ZHCSTL4C October 2023 – February 2025 MSPM0C1103 , MSPM0C1104
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VIH | High level input voltage | ODIO (1) | VDD≥1.62V | 0.7*VDD | 5.5 | V | |
| ODIO (1) | VDD≥2.7V | 2 | 5.5 | V | |||
| All I/O except ODIO & Reset | VDD≥1.62V | 0.7*VDD | VDD+0.3 | V | |||
| VIL | Low level input voltage | ODIO | VDD≥1.62V | -0.3 | 0.3*VDD | V | |
| ODIO | VDD≥2.7V | -0.3 | 0.8 | V | |||
| All I/O except ODIO & Reset | VDD≥1.62V | -0.3 | 0.3*VDD | V | |||
| VHYS | Hysteresis | ODIO | 0.05*VDD | V | |||
| All I/O except ODIO | 0.1*VDD | V | |||||
| Ilkg | High-Z leakage current | SDIO(2)(3) | VDD = 3V | 50 | nA | ||
| RPU | Pull up resistance | All I/O except ODIO | VIN = VSS | 40 | kΩ | ||
| RPD | Pull down resistance | VIN = VDD | 40 | kΩ | |||
| CI | Input capacitance | VDD = 3.3V | 5 | pF | |||
| VOH | High level output voltage | SDIO | VDD≥2.7V, |IIO|,max=6mA | VDD-0.5 | V | ||
| VOH | High level output voltage | SDIO | VDD ≥ 1.71V, |IIO|,max=2mA | VDD-0.4 | V | ||
| VOL | Low level output voltage | SDIO | VDD≥2.7V, |IIO|,max=6mA VDD≥1.71V, |IIO|,max=2mA |
0.4 | V | ||
| VOL | Low level output voltage | ODIO |
VDD≥2.7V, IOL,max=8mA VDD≥1.71V, IOL,max=4mA |
0.5 | V | ||