ZHCSHD3L October   2017  – March 2025 BQ2980 , BQ2982

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 Device Configurability
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overvoltage (OV) Status
      2. 7.3.2 Undervoltage (UV) Status
      3. 7.3.3 Overcurrent in Charge (OCC) Status
      4. 7.3.4 Overcurrent in Discharge (OCD) and Short Circuit in Discharge (SCD) Status
      5. 7.3.5 Overtemperature (OT) Status
      6. 7.3.6 Charge and Discharge Driver
      7. 7.3.7 CTR for FET Override and Device Shutdown
      8. 7.3.8 CTR for PTC Connection
      9. 7.3.9 ZVCHG (0V Charging)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Modes
        1. 7.4.1.1 Power-On-Reset (POR)
        2. 7.4.1.2 NORMAL Mode
        3. 7.4.1.3 FAULT Mode
        4. 7.4.1.4 SHUTDOWN Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Test Circuits for Device Evaluation
      2. 8.1.2 Test Circuit Diagrams
      3. 8.1.3 Using CTR as FET Driver On/Off Control
    2. 8.2 Typical Applications
      1. 8.2.1 BQ298xx Configuration 1: System-Controlled Reset/Shutdown Function
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Selection of Power FET
        4. 8.2.1.4 Application Curves
      2. 8.2.2 BQ298xx Configuration 2: CTR Function Disabled
      3. 8.2.3 BQ298xx Configuration 3: PTC Thermistor Protection
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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8.2.1.3 Selection of Power FET

The high-side driver of the BQ298xx device limits the Vgs below 8V with a 4.4V battery cell. This means the device can work with a power FET with an absolute maximum rating as low as ±8V Vgs, which is common in smartphone applications.

Additionally, TI highly recommends using a low gate leakage FET around 6V to 7V Vgs range. The power FET on the BQ298xx evaluation module has the following typical gate leakage. TI recommends selecting a similar gate leakage FET for the design.

BQ2980 BQ2982 Power FET (on BQ2980 EVM) Gate Leakage Versus VgsFigure 8-7 Power FET (on BQ2980 EVM) Gate Leakage Versus Vgs