ZHCSU23A October   2023  – December 2023 BQ25638

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 说明（续）
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power-On-Reset (POR)
      2. 7.3.2  Device Power Up from Battery
      3. 7.3.3  Device Power Up from Input Source
        1. 7.3.3.1 REGN LDO Power Up
        2. 7.3.3.2 Poor Source Qualification
        3. 7.3.3.3 Input Voltage Limit Threshold Setting (VINDPM Threshold)
        4. 7.3.3.4 Converter Power-Up
        5. 7.3.3.5 Input Current Optimizer (ICO)
        6. 7.3.3.6 Switching Frequency and Dithering Feature
      4. 7.3.4  Power Path Management
        1. 7.3.4.1 Narrow VDC Architecture
        2. 7.3.4.2 Dynamic Power Management
          1. 7.3.4.2.1 Input Current Limit on ILIM Pin
        3. 7.3.4.3 High Impedance (HIZ) Mode
      5. 7.3.5  Battery Charging Management
        1. 7.3.5.1 Autonomous Charging Cycle
        2. 7.3.5.2 Battery Charging Profile
        3. 7.3.5.3 Charging Termination
        4. 7.3.5.4 Thermistor Qualification
          1. 7.3.5.4.1 Advanced Temperature Profile in Charge Mode
          2. 7.3.5.4.2 TS Pin Thermistor Configuration
          3. 7.3.5.4.3 Cold/Hot Temperature Window in OTG Mode
          4. 7.3.5.4.4 JEITA Charge Rate Scaling
          5. 7.3.5.4.5 TS_BIAS Pin
        5. 7.3.5.5 Charging Safety Timers
      6. 7.3.6  USB On-The-Go (OTG)
        1. 7.3.6.1 Boost OTG Mode
      7. 7.3.7  Integrated 12-bit ADC for Monitoring
      8. 7.3.8  Status Outputs (INT , PG , STAT)
        1. 7.3.8.1 PG Pin Power Good Indicator
        2. 7.3.8.2 Charging Status Indicator (STAT)
        3. 7.3.8.3 Interrupt to Host (INT)
      9. 7.3.9  BATFET Control
        1. 7.3.9.1 Shutdown Mode
        2. 7.3.9.2 Ultra-Low Power Mode
        3. 7.3.9.3 System Power Reset
      10. 7.3.10 Protections
        1. 7.3.10.1 Voltage and Current Monitoring in Battery Only and HIZ Modes
          1. 7.3.10.1.1 Battery Overcurrent Protection
          2. 7.3.10.1.2 Battery Undervoltage Lockout
        2. 7.3.10.2 Voltage and Current Monitoring in Forward Mode
          1. 7.3.10.2.1 Input Overvoltage
          2. 7.3.10.2.2 System Overvoltage Protection (SYSOVP)
          3. 7.3.10.2.3 Forward Converter Cycle-by-Cycle Current Limit
          4. 7.3.10.2.4 System Short
          5. 7.3.10.2.5 Battery Overvoltage Protection (BATOVP)
          6. 7.3.10.2.6 Sleep and Poor Source Comparators
        3. 7.3.10.3 Voltage and Current Monitoring in Reverse Mode
          1. 7.3.10.3.1 Boost Mode Overvoltage Protection
          2. 7.3.10.3.2 Boost Mode Duty Cycle Protection
          3. 7.3.10.3.3 Boost Mode PMID Undervoltage Protection
          4. 7.3.10.3.4 Boost Mode Battery Undervoltage
          5. 7.3.10.3.5 Boost Converter Cycle-by-Cycle Current Limit
          6. 7.3.10.3.6 Boost Mode SYS Short
        4. 7.3.10.4 Thermal Regulation and Thermal Shutdown
          1. 7.3.10.4.1 Thermal Protection in Buck Mode
          2. 7.3.10.4.2 Thermal Protection in Boost Mode
          3. 7.3.10.4.3 Thermal Protection in Battery-only Mode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Host Mode and Default Mode
      2. 7.4.2 Register Bit Reset
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
        1. 7.5.1.1 Data Validity
        2. 7.5.1.2 START and STOP Conditions
        3. 7.5.1.3 Byte Format
        4. 7.5.1.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 7.5.1.5 Target Address and Data Direction Bit
        6. 7.5.1.6 Single Write and Read
        7. 7.5.1.7 Multi-Write and Multi-Read
    6. 7.6 BQ25638 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Input Capacitor
        3. 8.2.2.3 Output Capacitor
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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11.6 静电放电警告

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif 静电放电 (ESD) 会损坏这个集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理和安装程序，可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级，大至整个器件故障。精密的集成电路可能更容易受到损坏，这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。