ZHCSH00F August 2016 – November 2019 AM5706 , AM5708
PRODUCTION DATA.
Table 5-60 and Table 5-61 assume testing over the recommended operating conditions and electrical characteristic conditions below (see Figure 5-38, Figure 5-39, Figure 5-40 and Figure 5-41).
| NO. | PARAMETER | DESCRIPTION | MIN | MAX | UNIT |
|---|---|---|---|---|---|
| 1 | tCYCH | Read bit window timing | 190 | 250 | µs |
| 2 | tHW1 | Read one data valid after HDQ low | 32(2) | 66(2) | µs |
| 3 | tHW0 | Read zero data hold after HDQ low | 70(2) | 145(2) | µs |
| 4 | tRSPS | Response time from HDQ slave device(1) | 190 | 320 | µs |
| NO. | PARAMETER | DESCRIPTION | MIN | MAX | UNIT |
|---|---|---|---|---|---|
| 5 | tB | Break timing | 190 | µs | |
| 6 | tBR | Break recovery time | 40 | µs | |
| 7 | tCYCD | Write bit windows timing | 190 | µs | |
| 8 | tDW1 | Write one data valid after HDQ low | 0.5 | 50 | µs |
| 9 | tDW0 | Write zero data hold after HDQ low | 86 | 145 | µs |
Figure 5-38 HDQ Break and Break Recovery Timing — HDQ Interface Writing to Slave
Figure 5-39 Device HDQ Interface Bit Read Timing (Data)
Figure 5-40 Device HDQ Interface Bit Write Timing (Command / Address or Data)
Figure 5-41 HDQ Communication Timing