ZHCSBB4B July   2013  – June 2017 TPS61197

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Supply Voltage
      2. 7.3.2 Boost Controller
      3. 7.3.3 Switching Frequency
      4. 7.3.4 Enable and Undervoltage Lockout
      5. 7.3.5 Power-Up Sequencing and Soft Start-up
      6. 7.3.6 Current Regulation
      7. 7.3.7 PWM Dimming
      8. 7.3.8 Indication for Fault Conditions
    4. 7.4 Device Functional Modes
      1. 7.4.1 Protections
        1. 7.4.1.1 Switch Current Limit Protection Using the ISNS Pin
        2. 7.4.1.2 LED Open Protection
        3. 7.4.1.3 Schottky Diode Open Protection
        4. 7.4.1.4 Schottky Diode Short Protection
        5. 7.4.1.5 IFB Overvoltage Protection
        6. 7.4.1.6 Output Overvoltage Protection Using the OVP Pin
        7. 7.4.1.7 IFB Short-to-Ground Protection
        8. 7.4.1.8 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Simple Boost Converter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Inductor Selection
          2. 8.2.1.2.2 Output Capacitor
          3. 8.2.1.2.3 Schottky Diode
          4. 8.2.1.2.4 Switch MOSFET and Gate Driver Resistor
          5. 8.2.1.2.5 Current Sense and Current Sense Filtering
          6. 8.2.1.2.6 Loop Consideration
        3. 8.2.1.3 Application Curves
      2. 8.2.2 PWM Dimming Controlled by Boost Converter
      3. 8.2.3 High Boost Ratio Application
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

VIN = 24 V, TA = –40°C to 85°C, typical values are at TA = 25°C, EC1 = 470 μF, EC2 = 22 μF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
VIN Input voltage range 8 30 V
VVIN_UVLO Undervoltage lockout threshold VIN falling 6.5 7 V
VVIN_HYS VIN UVLO hysteresis 300 mV
IQ_VIN Operating quiescent current into VIN Device enabled, no switching, VIN = 30 V 2 mA
ISD Shutdown current VIN = 12 V
VIN = 30 V		 25
50		 µA
VDD Regulation voltage for internal circuit 0 mA < IDD< 15 mA 6.6 7 7.4 V
EN and PWM
VH Logic high input on EN, PWM VIN = 8 V to 30 V 1.6 V
VL Logic low input on EN, PWM VIN = 8 V to 30 V 0.75 V
RPD Pulldown resistance on EN, PWM 400 800 1600 kΩ
UVLO
VUVLOTH Threshold voltage at UVLO pin 1.204 1.229 1.253 V
IUVLO UVLO input bias current VUVLO = VUVLOTH – 50 mV –0.1 0.1 µA
VUVLO = VUVLOTH + 50 mV –4.4 -3.9 –3.3
SOFT START
ISS Soft start charging current PWM dimming on, VREF< 2 V 200 µA
CURRENT REGULATION
VIFB_REG IFB pin regulation voltage TJ = 25°C to 85°C 293 300 307 mV
VIFB_SCP IFB short to ground protection threshold 200 mV
VIFB_OVP IFB over voltage protection threshold 1 1.1 1.2 V
IIFB_LEAK IFB pin leakage current VIFB = 300 mV –100 100 nA
BOOST REFERENCE VOLTAGE
VREF Reference voltage range for boost controller 0 3.5 V
IREF_LEAK Leakage current at REF TJ = –40°C to 85°C –25 25 nA
OSCILLATOR
VFSW FSW pin reference voltage 1.8 V
ERROR AMPLIFIER
ISINK Comp pin sink current VOVP = VREF + 200 mV, VCOMP = 1V 20 µA
ISOURCE Comp pin source current VOVP = VREF – 200 mV, VCOMP = 1V 20 µA
GmEA Error amplifier transconductance 90 120 150 µS
REA Error amplifier output resistance 20 MΩ
GATE DRIVER
RGDRV_SRC Gate driver impedance when sourcing VGDRV = 7 V, IGDRV = –20 mA 5 10 Ω
RGDRV_SNK Gate driver impedance when sinking VDD = 7 V, IGDRV = 20 mA 2 5 Ω
IGDRV_SRC Gate driver source current VDD = 7 V, VGDRV = 5 V 200 mA
IGDRV_SNK Gate driver sink current VDD = 7 V, VGDRV = 2 V 400 mA
VPWM_OCP Overcurrent detection threshold during PWM VIN = 8 V to 30 V, TJ = 25°C to 125°C 376 400 424 mV
VPFM_OCP Overcurrent detection threshold during PFM 180 mV
OVP
VOVPTH Overvoltage protection threshold 2.98 3.04 3.1 V
IOVP_LEAK Leakage current at OVP pin –100 0 100 nA
FAULT INDICATOR
IFLT_H Leakage current at high impedance VFLT = 24 V 1 nA
IFLT_L Sink current at low output VFLT = 1 V 2 5 mA
THERMAL SHUTDOWN
TSTDN Thermal shutdown threshold 150 °C
THYS Thermal shutdown threshold hysteresis 15 °C