ZHCSFH8D August   2016  – January 2018 TPS25741 , TPS25741A

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      DFP 主机端口中的简化实施方案
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 VBUS Capacitance
      2. 8.1.2 USB Data Communications
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  USB Type-C CC Logic (CC1, CC2)
      2. 8.3.2  9.3.2 VCONN Supply (VCONN, CC1, CC2)
      3. 8.3.3  USB Power Delivery BMC Transmission (CC1, CC2, VTX)
      4. 8.3.4  USB Power Delivery BMC Reception (CC1, CC2)
      5. 8.3.5  Discharging (DSCG, VPWR)
        1. 8.3.5.1 Discharging after a Fault (VPWR)
      6. 8.3.6  Configuring Voltage Capabilities (HIPWR, EN9V, EN12V)
      7. 8.3.7  Configuring Power Capabilities (PSEL, PCTRL, HIPWR)
      8. 8.3.8  Gate Drivers
        1. 8.3.8.1 GDNG, GDNS
        2. 8.3.8.2 G5V
        3. 8.3.8.3 GDPG
      9. 8.3.9  Fault Monitoring and Protection
        1. 8.3.9.1 Over/Under Voltage (VBUS)
        2. 8.3.9.2 Over-Current Protection (ISNS, VBUS)
        3. 8.3.9.3 System Fault Input (GD, VPWR)
      10. 8.3.10 Voltage Control (CTL1, CTL2)
      11. 8.3.11 Sink Attachment Indicator (UFP, DVDD)
      12. 8.3.12 Accessory Attachment Indicator (AUDIO, DEBUG)
      13. 8.3.13 Plug Polarity Indication (POL)
      14. 8.3.14 Power Supplies (VAUX, VDD, VPWR, DVDD)
      15. 8.3.15 Grounds (AGND, GND)
      16. 8.3.16 Output Power Supply (DVDD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Sleep Mode
      2. 8.4.2 Checking VBUS at Start Up
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 System-Level ESD Protection
      2. 9.1.2 Use of GD Internal Clamp
      3. 9.1.3 Resistor Divider on GD for Programmable Start Up
      4. 9.1.4 Selection of the CTL1 and CTL2 Resistors (RFBL1 and RFBL2)
      5. 9.1.5 Voltage Transition Requirements
      6. 9.1.6 VBUS Slew Control using GDNG CSLEW
      7. 9.1.7 Tuning OCP Using RF and CF
    2. 9.2 Typical Applications
      1. 9.2.1 A/C Multiplexing Power Source
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Power Pin Bypass Capacitors
          2. 9.2.1.2.2 Non-Configurable Components
          3. 9.2.1.2.3 Configurable Components
        3. 9.2.1.3 Application Curves
      2. 9.2.2 D/C Power Source
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Power Pin Bypass Capacitors
          2. 9.2.2.2.2 Non-Configurable Components
          3. 9.2.2.2.3 Configurable Components
        3. 9.2.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 A/C Power Source (Wall Adapter)
      2. 9.3.2 Dual-Port Power Managed A/C Power Source (Wall Adapter)
  10. 10Power Supply Recommendations
    1. 10.1 VDD
    2. 10.2 VCONN
    3. 10.3 VPWR
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Port Current Kelvin Sensing
      2. 11.1.2 Power Pin Bypass Capacitors
      3. 11.1.3 Supporting Components
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 Documentation Support
    2. 12.2 相关链接
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.2.2.2.3 Configurable Components

  • CRX: Choose CRX between 200 pF and 600 pF. A 470 pF, 50 V, ±5% COG/NPO ceramic is recommended for both CC1 and CC2 pins.
  • Q1: For a 3 A application, an N-Channel MOSFET with RDS(on) in the 10 mΩ range is sufficient. BVDSS should be rated for 30 V for applications delivering 20 V, and 25 V for 12 V applications. For this application, the TI CSD17579Q3A (SLPS527) NexFET™ is suitable.
  • RS: TPS25741 or TPS25741A OCP set point thresholds are targeted towards a 5 mΩ, ±1% sense resistor. Power dissipation for RS at 3 A load is approximately 45 mW.
  • RDSCG: The minimum value of RDSCG is chosen based on the application VBUS(max) and IDSCGT. For VBUS(max) = 12 V and I(DSCGT) = 350 mA, RDSCG(min) = 34.3 Ω. The size of the external resistor can then be chosen based on the capacitive load that needs to be discharged and the maximum allowed discharge time of 90 ms. Typically, a 120 Ω, 0.5 W resistor provides suitable performance.
  • RF/CF: Not used
  • CPDIN: The requirement for CPDIN is 10 µF maximum. A 6.8 µF, 25 V, ±10% X5R or X7R ceramic capacitor is suitable for most applications.
  • DVBUS: DVBUS provides reverse transient protection during large transient conditions when inductive loads are present. A Schottky diode with a VRRM rating of 30 V in a SMA package such as the B340A-13-F provides suitable reverse voltage clamping performance.
  • CSLEW: To achieve a slew rate from zero to 5 V of less than 30 mV/µs using the typical GDNG current of 20 µA then CSLEW (nF) > 20 µA/30 mV/µs = 0.67 nF be used. Choosing CSLEW = 10 nF yields a ramp rate of 2 mV/µs.
  • RFBL1/RFBL2: In this design example, RFBU = 49.9 kΩ and RFBL = 9.53 kΩ. The feedback error amplifier VREF = 0.8 V. Using the equations for RFBL2 (Equation 4 and Equation 5) provide a calculated value of 9.9 kΩ and a selected value of 9.76 kΩ. In similar fashion for RFBL1, a calculated value of 6.74 kΩ and a selected value of 6.65 kΩ is provided.
  • CSLU/CSLL: The value of CSLU is calculated based on the desired 95% slew rate of 3 ms. CSLU = 3 ms/(3 x 49.9 kΩ) = 20 nF. Choose a 22-nF capacitor for CSLU. Next, CSLL is calculated as CSLU x (RFBU/RFBL) = 22 nF x (49.9 kΩ/9.53 kΩ) = 115 nF. Choose a 100-nF capacitor for CSLL.