ZHCSU80 December   2023 CC2340R2

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. 功能方框图
  6. Device Comparison
  7. Pin Configuration and Functions
    1. 6.1 Pin Diagram – RGE Package (Top View)
    2. 6.2 Signal Descriptions – RGE Package
    3. 6.3 Connections for Unused Pins and Modules – RGE Package
    4. 6.4 RGE Peripheral Pin Mapping
    5. 6.5 RGE Peripheral Signal Descriptions
  8. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  DCDC
    5. 7.5  Global LDO (GLDO)
    6. 7.6  Power Supply and Modules
    7. 7.7  Battery Monitor
    8. 7.8  Temperature Sensor
    9. 7.9  Power Consumption - Power Modes
    10. 7.10 Power Consumption - Radio Modes
    11. 7.11 Nonvolatile (Flash) Memory Characteristics
    12. 7.12 Thermal Resistance Characteristics
    13. 7.13 RF Frequency Bands
    14. 7.14 Bluetooth Low Energy - Receive (RX)
    15. 7.15 Bluetooth Low Energy - Transmit (TX)
    16. 7.16 2.4 GHz RX/TX CW
    17. 7.17 Timing and Switching Characteristics
      1. 7.17.1 Reset Timing
      2. 7.17.2 Wakeup Timing
      3. 7.17.3 Clock Specifications
        1. 7.17.3.1 48 MHz Crystal Oscillator (HFXT)
        2. 7.17.3.2 48 MHz RC Oscillator (HFOSC)
        3. 7.17.3.3 32 kHz Crystal Oscillator (LFXT)
        4. 7.17.3.4 32 kHz RC Oscillator (LFOSC)
    18. 7.18 Peripheral Characteristics
      1. 7.18.1 UART
        1. 7.18.1.1 UART Characteristics
      2. 7.18.2 SPI
        1. 7.18.2.1 SPI Characteristics
        2. 7.18.2.2 SPI Controller Mode
        3. 7.18.2.3 SPI Timing Diagrams - Controller Mode
        4. 7.18.2.4 SPI Peripheral Mode
        5. 7.18.2.5 SPI Timing Diagrams - Peripheral Mode
      3. 7.18.3 I2C
        1. 7.18.3.1 I2C
        2. 7.18.3.2 I2C Timing Diagram
      4. 7.18.4 GPIO
        1. 7.18.4.1 GPIO DC Characteristics
      5. 7.18.5 ADC
        1. 7.18.5.1 Analog-to-Digital Converter (ADC) Characteristics
      6. 7.18.6 Comparators
        1. 7.18.6.1 Ultra-low power comparator
    19. 7.19 Typical Characteristics
      1. 7.19.1 MCU Current
      2. 7.19.2 RX Current
      3. 7.19.3 TX Current
      4. 7.19.4 RX Performance
      5. 7.19.5 TX Performance
      6. 7.19.6 ADC Performance
  9. Detailed Description
    1. 8.1  Overview
    2. 8.2  System CPU
    3. 8.3  Radio (RF Core)
      1. 8.3.1 Bluetooth 5.3 Low Energy
    4. 8.4  Memory
    5. 8.5  Cryptography
    6. 8.6  Timers
    7. 8.7  Serial Peripherals and I/O
    8. 8.8  Battery and Temperature Monitor
    9. 8.9  µDMA
    10. 8.10 Debug
    11. 8.11 Power Management
    12. 8.12 Clock Systems
    13. 8.13 Network Processor
  10. Application, Implementation, and Layout
    1. 9.1 Reference Designs
    2. 9.2 Junction Temperature Calculation
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
      1. 10.2.1 SimpleLink™ Microcontroller Platform
    3. 10.3 Documentation Support
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Wakeup Timing

Measured over operating free-air temperature with VDDS = 3.0 V (unless otherwise noted). The times listed here do not include any software overhead (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MCU, Reset/Shutdown to Active(1) GLDO default charge current setting, VDDR capacitor fully charged (2) 350-450 µs
MCU, Standby to Active MCU, Standby to Active (ready to execute code from flash). DCDC ON,  default recharge current configuration 33-43 (3) µs
MCU, Standby to Active MCU, Standby to Active (ready to execute code from flash). GLDO ON, default recharge current configuration 33-50 (3) µs
MCU, Idle to Active Flash enabled in idle mode 3 µs
MCU, Idle to Active Flash disabled in idle mode 14 µs
Wakeup time includes device ROM bootcode execution time. The wakeup time is dependent on remaining charge on VDDR capacitor when starting the device, and thus how long the device has been in Reset or Shutdown before starting up again.
This is the best case reset/shutdown to active time (including ROM bootcode operation), for the specified GLDO charge current setting considering the VDDR capacitor is fully charged and is not discharged during the reset and shutdown events; that is, when the device is in reset / shutdown modes for only a very short period of time
Depending on VDDR capacitor voltage level.