ZHCSAF0E September   2012  – January 2018

PRODUCTION DATA.  

  1. 特性
  2. 应用范围
  3. 说明
    1.     典型应用电路
  4. 修订历史记录
  5. 说明 (续)
  6. Device Comparisons
  7. Pin Configuration and Functions
    1.     Pin Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Operational Flow Chart
    4. 9.4 Feature Description
      1. 9.4.1 Input Voltage Protection
        1. 9.4.1.1 Input Overvoltage Protection
        2. 9.4.1.2 Bad Adaptor Detection/Rejection
        3. 9.4.1.3 Sleep Mode
        4. 9.4.1.4 Input Voltage Based DPM (Special Charger Voltage Threshold)
      2. 9.4.2 Battery Protection
        1. 9.4.2.1 Output Overvoltage Protection
        2. 9.4.2.2 Battery Detection at Power Up in DEFAULT Mode
        3. 9.4.2.3 Battery Short Protection
        4. 9.4.2.4 Battery Detection in Host Mode
      3. 9.4.3 DEFAULT Mode
      4. 9.4.4 USB Friendly Power Up
      5. 9.4.5 Input Current Limiting At Power Up
    5. 9.5 Device Functional Modes
      1. 9.5.1 Charge Mode Operation
        1. 9.5.1.1 Charge Profile
      2. 9.5.2 PWM Controller in Charge Mode
      3. 9.5.3 Battery Charging Process
      4. 9.5.4 Thermal Regulation and Protection
      5. 9.5.5 Charge Status Output, STAT Pin
      6. 9.5.6 Control Bits in Charge Mode
        1. 9.5.6.1 CE Bit (Charge Mode)
        2. 9.5.6.2 RESET Bit
        3. 9.5.6.3 OPA_Mode Bit
      7. 9.5.7 Control Pins in Charge Mode
        1. 9.5.7.1 CD Pin (Charge Disable)
      8. 9.5.8 BOOST Mode Operation
        1. 9.5.8.1 PWM Controller in Boost Mode
        2. 9.5.8.2 Boost Start Up
        3. 9.5.8.3 PFM Mode at Light Load
        4. 9.5.8.4 Protection in Boost Mode
          1. 9.5.8.4.1 Output Overvoltage Protection
          2. 9.5.8.4.2 Output Overload Protection
          3. 9.5.8.4.3 Battery Overvoltage Protection
        5. 9.5.8.5 STAT Pin in Boost Mode
      9. 9.5.9 High Impedance (Hi-Z) Mode
    6. 9.6 Programming
      1. 9.6.1 Serial Interface Description
        1. 9.6.1.1 F/S Mode Protocol
        2. 9.6.1.2 H/S Mode Protocol
        3. 9.6.1.3 I2C Update Sequence
        4. 9.6.1.4 Slave Address Byte
        5. 9.6.1.5 Register Address Byte
    7. 9.7 Register Description
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Typical Application
        1. 10.1.1.1 Design Requirements
        2. 10.1.1.2 Detailed Design Procedure
      2. 10.1.2 Charge Current Sensing Resistor Selection Guidelines
      3. 10.1.3 Output Inductor and Capacitance Selection Guidelines
    2. 10.2 Typical Performance Curves
  11. 11Power Supply Recommendations
    1. 11.1 System Load After Sensing Resistor
      1. 11.1.1 The Advantages:
      2. 11.1.2 Design Requirements and Potential Issues:
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 接收文档更新通知
    3. 13.3 Community Resources
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息
    1. 14.1 封装概要
      1. 14.1.1 芯片级封装尺寸

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Layout Guidelines

It is important to pay special attention to the PCB layout. The following provides some guidelines:

  • To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placed as close as possible to the pin. The output inductor should be placed close to the IC and the output capacitor connected between the inductor and PGND of the IC. The intent is to minimize the current path loop area from the SW pin through the LC filter and back to the PGND pin. To prevent high frequency oscillation problems, proper layout to minimize high frequency current path loop is critical. (See Figure 34.) The sense resistor should be adjacent to the junction of the inductor and output capacitor. Route the sense leads connected across the RSNS back to the IC, close to each other (minimize loop area) or on top of each other on adjacent layers (do not route the sense leads through a high-current path). (See Figure 35.)
  • Place all decoupling capacitors close to their respective IC pins and close to PGND (do not place components such that routing interrupts power stage currents). All small control signals should be routed away from the high current paths.
  • The PCB should have a ground plane (return) connected directly to the return of all components through vias (two vias per capacitor for power-stage capacitors, two vias for the IC PGND, one via per capacitor for small-signal components). A star ground design approach is typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A single ground plane for this design gives good results. With this small layout and a single ground plane, there is no ground-bounce issue, and having the components segregated minimizes coupling between signals.
  • The high-current charge paths into VBUS, PMID and from the SW pins must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be connected to the ground plane to return current through the internal low-side FET.
  • Place 4.7μF input capacitor as close to PMID pin and PGND pin as possible to make high frequency current loop area as small as possible. Place 1μF input capacitor as close to VBUS pin and PGND pin as possible to make high frequency current loop area as small as possible (see Figure 36).
bq24157 cur_pth_lus931.gifFigure 34. High Frequency Current Path