ZHCSAF0E September   2012  – January 2018

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     典型应用电路
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Device Comparisons
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Operational Flow Chart
    4. 9.4 Feature Description
      1. 9.4.1 Input Voltage Protection
        1. 9.4.1.1 Input Overvoltage Protection
        2. 9.4.1.2 Bad Adaptor Detection/Rejection
        3. 9.4.1.3 Sleep Mode
        4. 9.4.1.4 Input Voltage Based DPM (Special Charger Voltage Threshold)
      2. 9.4.2 Battery Protection
        1. 9.4.2.1 Output Overvoltage Protection
        2. 9.4.2.2 Battery Detection at Power Up in DEFAULT Mode
        3. 9.4.2.3 Battery Short Protection
        4. 9.4.2.4 Battery Detection in Host Mode
      3. 9.4.3 DEFAULT Mode
      4. 9.4.4 USB Friendly Power Up
      5. 9.4.5 Input Current Limiting At Power Up
    5. 9.5 Device Functional Modes
      1. 9.5.1 Charge Mode Operation
        1. 9.5.1.1 Charge Profile
      2. 9.5.2 PWM Controller in Charge Mode
      3. 9.5.3 Battery Charging Process
      4. 9.5.4 Thermal Regulation and Protection
      5. 9.5.5 Charge Status Output, STAT Pin
      6. 9.5.6 Control Bits in Charge Mode
        1. 9.5.6.1 CE Bit (Charge Mode)
        2. 9.5.6.2 RESET Bit
        3. 9.5.6.3 OPA_Mode Bit
      7. 9.5.7 Control Pins in Charge Mode
        1. 9.5.7.1 CD Pin (Charge Disable)
      8. 9.5.8 BOOST Mode Operation
        1. 9.5.8.1 PWM Controller in Boost Mode
        2. 9.5.8.2 Boost Start Up
        3. 9.5.8.3 PFM Mode at Light Load
        4. 9.5.8.4 Protection in Boost Mode
          1. 9.5.8.4.1 Output Overvoltage Protection
          2. 9.5.8.4.2 Output Overload Protection
          3. 9.5.8.4.3 Battery Overvoltage Protection
        5. 9.5.8.5 STAT Pin in Boost Mode
      9. 9.5.9 High Impedance (Hi-Z) Mode
    6. 9.6 Programming
      1. 9.6.1 Serial Interface Description
        1. 9.6.1.1 F/S Mode Protocol
        2. 9.6.1.2 H/S Mode Protocol
        3. 9.6.1.3 I2C Update Sequence
        4. 9.6.1.4 Slave Address Byte
        5. 9.6.1.5 Register Address Byte
    7. 9.7 Register Description
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Typical Application
        1. 10.1.1.1 Design Requirements
        2. 10.1.1.2 Detailed Design Procedure
      2. 10.1.2 Charge Current Sensing Resistor Selection Guidelines
      3. 10.1.3 Output Inductor and Capacitance Selection Guidelines
    2. 10.2 Typical Performance Curves
  11. 11Power Supply Recommendations
    1. 11.1 System Load After Sensing Resistor
      1. 11.1.1 The Advantages:
      2. 11.1.2 Design Requirements and Potential Issues:
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 接收文档更新通知
    3. 13.3 Community Resources
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息
    1. 14.1 封装概要
      1. 14.1.1 芯片级封装尺寸

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.5 Electrical Characteristics

Circuit of Figure 23, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT CURRENTS
I(VBUS) VBUS supply current control VBUS > VBUS(min), PWM switching 10 mA
VBUS > VBUS(min), PWM NOT switching 5
0°C < TJ < 85°C, CD=1 or HZ_MODE=1 15 23 μA
Ilgk Leakage current from battery to VBUS pin 0°C < TJ < 85°C, V(CSOUT) = 4.2 V,
High Impedance mode, VBUS = 0 V		 5 μA
Battery discharge current in High Impedance mode, (CSIN, CSOUT, SW pins) 0°C < TJ < 85°C, V(CSOUT) = 4.2 V,
High Impedance mode, V = 0 V, SCL, SDA,
OTG = 0 V or 1.8 V 		23 μA
VOLTAGE REGULATION
V(OREG) Output regulation voltage programable range Operating in voltage regulation, programmable 3.5 4.44 V
Voltage regulation accuracy TA = 25°C –0.5% 0.5%
–1% 1%
CURRENT REGULATION (FAST CHARGE)
IO(CHARGE) Output charge current programmable range V(LOWV) ≤ V(CSOUT) < V(OREG),
VBUS > V(SLP), R(SNS) = 68 mΩ, LOW_CHG=0, Programmable		 550 1250 mA
Low charge current VLOWV ≤ VCSOUT < VOREG, VBUS >VSLP,
RSNS= 68 mΩ, LOW_CHG=1, OTG=High 		325 350 mA
Regulation accuracy of the voltage across R(SNS) (for charge current regulation)
V(IREG) = IO(CHARGE) × R(SNS)		 37.4 mV ≤ V(IREG)< 44.2mV –3.5% 3.5%
44.2 mV ≤ V(IREG) -3% 3%
WEAK BATTERY DETECTION
V(LOWV) Weak battery voltage threshold programmable range2(2) Adjustable using I2C control 3.4 3.7 V
Weak battery voltage accuracy –5% 5%
Hysteresis for V(LOWV) Battery voltage falling 100 mV
CD, OTG and SLRST PIN LOGIC LEVEL
VIL Input low threshold level 0.4 V
VIH Input high threshold level 1.3 V
I(bias) Input bias current Voltage on control pin is 5 V 1.0 µA
CHARGE TERMINATION DETECTION
I(TERM) Termination charge current programmable range V(CSOUT) > V(OREG) – V(RCH), VBUS > V(SLP),
R(SNS) = 68 mΩ, Programmable		 50 400 mA
Regulation accuracy for termination current across R(SNS)
V(IREG_TERM) = IO(TERM) × R(SNS)		 3.4 mV ≤ V(IREG_TERM) ≤ 6.8 mV –15% 15%
6.8 mV < V(IREG_TERM) ≤ 17 mV –10% 10%
17 mV < V(IREG_TERM) ≤ 27.2 mV –5.5% 5.5%
BAD ADAPTOR DETECTION
VIN(min) Input voltage lower limit BAD ADAPTOR DETECTION 3.6 3.8 4 V
Hysteresis for VIN(min) Input voltage rising 100 200 mV
ISHORT Current source to GND During bad adaptor detection 20 30 40 mA
INPUT BASED DYNAMIC POWER MANAGEMENT
VIN_DPM Input Voltage DPM threshold programmable range 4.2 4.76 V
VIN DPM threshold accuracy –3% 1%
INPUT CURRENT LIMITING
IIN_LIMIT Input current limiting threshold IIN = 100 mA TJ = 0°C – 125°C 88 93 98 mA
TJ = –40°C –125°C 86 93 98
IIN = 500 mA TJ = 0°C – 125°C 450 475 500 mA
TJ = –40°C –125°C 440 475 500
VREF BIAS REGULATOR
VREF Internal bias regulator voltage VBUS >VIN(min) or V(CSOUT) > VBUS(min),
I(VREF) = 1 mA, C(VREF) = 1 μF		 2 6.5 V
VREF output short current limit 30 mA
BATTERY RECHARGE THRESHOLD
V(RCH) Recharge threshold voltage Below V(OREG) 100 120 150 mV
STAT OUTPUTS
VOL(STAT) Low-level output saturation voltage, STAT pin IO = 10 mA, sink current 0.55 V
High-level leakage current for STAT Voltage on STAT pin is 5 V 1 μA
I2C BUS LOGIC LEVELS AND TIMING CHARACTERISTICS
VOL Output low threshold level IO = 10 mA, sink current 0.4 V
VIL Input low threshold level V(pull-up) = 1.8 V, SDA and SCL 0.4 V
VIH Input high threshold level V(pull-up) = 1.8 V, SDA and SCL 1.2 V
I(BIAS) Input bias current V(pull-up) = 1.8 V, SDA and SCL 1 μA
f(SCL) SCL clock frequency 3.4 MHz
BATTERY DETECTION
I(DETECT) Battery detection current before charge done (sink current) (1) Begins after termination detected,
V(CSOUT) ≤ V(BATREG)		 –0.5 mA
SLEEP COMPARATOR
V(SLP) Sleep-mode entry threshold,
VBUS – VCSOUT		 2.3 V ≤ V(CSOUT) ≤ V(BATREG), VBUS falling 0 40 100 mV
V(SLP_EXIT) Sleep-mode exit hysteresis 2.3 V ≤ V(CSOUT) ≤ V(BATREG) 140 200 260 mV
UNDERVOLTAGE LOCKOUT (UVLO)
UVLO IC active threshold voltage VBUS rising - Exits UVLO 3.05 3.3 3.55 V
UVLO(HYS) IC active hysteresis VBUS falling below UVLO - Enters UVLO 120 150 mV
PWM
Voltage from BOOT pin to SW pin During charge or boost operation 6.5 V
Internal top reverse blocking MOSFET on-resistance IIN(LIMIT) = 500 mA, Measured from VBUS to PMID 180 250 mΩ
Internal top N-channel Switching MOSFET on-resistance Measured from PMID to SW,
VBOOT – VSW= 4V		 120 250
Internal bottom N-channel MOSFET on-resistance Measured from SW to PGND 110 210
f(OSC) Oscillator frequency 3.0 MHz
Frequency accuracy –10% 10%
D(MAX) Maximum duty cycle 99.5%
D(MIN) Minimum duty cycle 0
Synchronous mode to non-synchronous mode transition current threshold(1) Low-side MOSFET cycle-by-cycle current sensing 100 mA
CHARGE MODE PROTECTION
VOVP_IN_USB Input VBUS OVP threshold voltage VBUS threshold to turn off converter during charge 6.3 6.5 6.7 V
VOVP Output OVP threshold voltage V(CSOUT) threshold over V(OREG) to turn off charger during charge 110 117 121 %VOREG
V(OVP) hysteresis Lower limit for V(CSOUT) falling from above V(OVP) 11
ILIMIT Cycle-by-cycle current limit for charge Charge mode operation 1.8 2.4 3.0 A
VSHORT Trickle to fast charge threshold V(CSOUT) rising 2.0 2.1 2.2 V
VSHORT hysteresis V(CSOUT) falling below VSHORT 100 mV
ISHORT Trickle charge charging current V(CSOUT) ≤ VSHORT) 20 30 40 mA
BOOST MODE OPERATION FOR VBUS (OPA_MODE = 1, HZ_MODE = 0)
VBUS_B Boost output voltage (to VBUS pin) 2.5V < V(CSOUT) < 4.5 V 5.05 V
Boost output voltage accuracy Including line and load regulation –3% 3%
IBO Maximum output current for boost VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V,
TJ= 0°C – 125°C		 200 mA
IBLIMIT Cycle by cycle current limit for boost VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V 1.0 A
VBUSOVP Overvoltage protection threshold for boost (VBUS pin) Threshold over VBUS to turn off converter during boost 5.8 6.0 6.2 V
VBUSOVP hysteresis VBUS falling from above VBUSOVP 162 mV
VBATMAX Maximum battery voltage for boost (CSOUT pin) V(CSOUT) rising edge during boost 4.75 4.9 5.05 V
VBATMAX hysteresis V(CSOUT) falling from above VBATMAX 200 mV
VBATMIN Minimum battery voltage for boost (CSOUT pin) During boosting 2.5 V
Before boost starts 2.9 3.05 V
Boost output resistance at high-impedance mode (From VBUS to PGND) CD = 1 or HZ_MODE = 1 217 kΩ
PROTECTION
TSHTDWN) Thermal trip 165 °C
Thermal hysteresis 10
TCF Thermal regulation threshold Charge current begins to reduce 120
(1) Bottom N-channel FET always turns on for ~30 ns and then turns off if current is too low.
(2) While in DEFAULT mode, if a battery that is charged to a voltage higher than this voltage is inserted, the charger enters Hi-Z mode and awaits I2C commands.