UCC27712

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支持互锁功能的 1.8A/2.8A、620V 半桥驱动器

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数据表

document-pdfAcrobat UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock 数据表 (Rev. B) (英语) PDF | HTML

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功能与比较器件相同但引脚有所不同。

新 UCC27734

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具有 8V UVLO 和互锁的 700V、4A 半桥栅极驱动器 same functionality

UCC27712

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数据表

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产品详情

Bootstrap supply voltage (max) (V)

700

Power switch

IGBT, MOSFET

Input supply voltage (min) (V)

10

Input supply voltage (max) (V)

20

Peak output current (A)

2.8

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

10

Rating

Catalog

Propagation delay time (µs)

0.1

Rise time (ns)

16

Fall time (ns)

10

Iq (mA)

0.25

Input threshold

CMOS, TTL

Channel input logic

Noninverting

Switch node voltage (V)

-11

Features

Dead time control, Interlock

Driver configuration

CMOS compatible, Dual, Noninverting, TTL compatible

Bootstrap supply voltage (max) (V)

700

Power switch

IGBT, MOSFET

Input supply voltage (min) (V)

10

Input supply voltage (max) (V)

20

Peak output current (A)

2.8

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

10

Rating

Catalog

Propagation delay time (µs)

0.1

Rise time (ns)

16

Fall time (ns)

10

Iq (mA)

0.25

Input threshold

CMOS, TTL

Channel input logic

Noninverting

Switch node voltage (V)

-11

Features

Dead time control, Interlock

Driver configuration

CMOS compatible, Dual, Noninverting, TTL compatible

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

High-side and low-side configuration
Dual inputs with output interlock and 150-ns deadtime
Fully operational up to 620-V, 700-V absolute maximum on HB pin
10-V to 20-V VDD recommended range
Peak output current 2.8-A sink, 1.8-A source
dv/dt immunity of 50 V/ns
Logic operational up to –11 V on HS pin
Negative voltage tolerance on inputs of –5 V
Large negative transient safe operating area
UVLO protection for both channels
Small propagation delay (100-ns typical)
Delay matching (12-ns typical)
Floating channel designed for bootstrap operation
Low quiescent current
TTL and CMOS compatible inputs
Industry standard SOIC-8 package
All parameters specified over temperature range, –40 °C to +125 °C

High-side and low-side configuration
Dual inputs with output interlock and 150-ns deadtime
Fully operational up to 620-V, 700-V absolute maximum on HB pin
10-V to 20-V VDD recommended range
Peak output current 2.8-A sink, 1.8-A source
dv/dt immunity of 50 V/ns
Logic operational up to –11 V on HS pin
Negative voltage tolerance on inputs of –5 V
Large negative transient safe operating area
UVLO protection for both channels
Small propagation delay (100-ns typical)
Delay matching (12-ns typical)
Floating channel designed for bootstrap operation
Low quiescent current
TTL and CMOS compatible inputs
Industry standard SOIC-8 package
All parameters specified over temperature range, –40 °C to +125 °C

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

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顶层文档	类型	标题	格式选项	下载最新的英语版本		日期
*	数据表	UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock 数据表 (Rev. B)	PDF \| HTML			2020-3-5
	应用手册	为 HVAC 系统选择栅极驱动器 (Rev. A)	PDF \| HTML	英语版 (Rev.A)	PDF \| HTML	2025-12-1
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	应用手册	不同功率因数校正 (PFC) 拓扑的栅极驱动器需求综述	PDF \| HTML	英语版	PDF \| HTML	2024-1-23
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	应用手册	针对半桥配置的自举电路选择 (Rev. A)	PDF \| HTML	英语版 (Rev.A)	PDF \| HTML	2023-9-14
	应用手册	比较分析两种不同的可提高栅极驱动电流的方法 (Rev. A)	PDF \| HTML	英语版 (Rev.A)	PDF \| HTML	2022-4-1
	应用手册	适用于高频逆变器并采用 C2000 的电压馈电全桥直流/直流和直流/交流转换器 (Rev. D)	PDF \| HTML	英语版 (Rev.D)		2021-5-3
	应用手册	Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery.				2020-5-12
	应用简报	适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A)		英语版 (Rev.A)		2020-4-29
	应用简报	了解峰值源电流和灌电流 (Rev. A)		英语版 (Rev.A)		2020-4-29
	更多文献资料	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)				2018-10-29
	技术文章	How to achieve higher system robustness in DC drives, part 3: minimum input pulse	PDF \| HTML			2018-9-19
	技术文章	How to achieve higher system robustness in DC drives, part 2: interlock and deadti	PDF \| HTML			2018-5-30
	技术文章	How to achieve higher system robustness in DC drives, part 1: negative voltage	PDF \| HTML			2018-4-17

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评估板

UCC27712EVM-287 — UCC27712 具有互锁功能的 620V、1.8A、2.8A 高侧低侧栅极驱动器评估模块

UCC27712EVM-287 适用于评估 UCC27712D，后者是一种具备高峰值拉电流和灌电流能力的 620V 半桥栅极驱动器。此 EVM 可用于参照驱动器 IC 的数据表对其进行评估。该 EVM 还可用作驱动器 IC 组件选择指南。该 EVM 可轻松地配置为各种功率级拓扑（例如同步降压转换器），且布局效果可进行测试。

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