LM5114
- Independent Source and Sink Outputs for
Controllable Rise and Fall Times - 4-V to 12.6-V Single Power Supply
- 7.6-A/1.3-A Peak Sink and Source Drive Current
- 0.23-Ω Open-drain Pulldown Sink Output
- 2-Ω Open-drain Pullup Source Output
- 12-ns (Typical) Propagation Delay
- Matching Delay Time Between Inverting and
Noninverting Inputs - TTL/CMOS Logic Inputs
- 0.68-V Input Hysteresis
- Up to 14-V Logic Inputs (Regardless of VDD Voltage)
- Low Input Capacitance: 2.5-pF (Typical)
- –40°C to 125°C Operating Temperature Range
- Pin-to-Pin Compatible With MAX5048
- 6-Pin SOT-23
The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LM5114 Single 7.6-A Peak Current Low-Side Gate Driver 数据表 (Rev. F) | PDF | HTML | 2015-11-30 | ||
| 应用手册 | 不同功率因数校正 (PFC) 拓扑的栅极驱动器需求综述 | PDF | HTML | 英语版 | PDF | HTML | 2024-1-23 | |
| 应用手册 | 使用单输出栅极驱动器实现高侧或低侧驱动 (Rev. B) | PDF | HTML | 英语版 (Rev.B) | PDF | HTML | 2023-9-13 | |
| 应用手册 | 紧凑、强大且稳健的低侧栅极驱动器的优势 | PDF | HTML | 英语版 | PDF | HTML | 2022-9-23 | |
| 应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用手册 | Improving Efficiency of DC-DC Conversion through Layout | 2019-5-7 | ||||
| 应用简报 | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019-1-18 | ||||
| 更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018-10-29 | ||||
| 应用简报 | Enable Function with Unused Differential Input | 2018-7-11 | ||||
| 应用简报 | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018-3-16 | ||||
| 白皮书 | 证明 GaN 产品可靠性的一整套综合算法 | 英语版 | 2016-3-30 | |||
| 白皮书 | Advancing Power Supply Solutions Through the Promise of GaN | 2015-2-24 |
设计与开发
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LM5114BSDEVAL — LM5114 升压栅极驱动器评估板
LM5114 是一款单路低侧栅极驱动器，具有 7.6A/1.3A 的峰值灌/拉驱动电流能力。它可用于驱动升压型配置中的标准 Si MOSFET 或增强模式 GaN FET，或用于驱动隔离式拓扑中的次级同步 FET。LM5114 评估板旨在为设计工程师提供功能齐全的升压直流-直流转换器，以来评估 LM5114。100V 增强模式 GaN FET (EPC2001) 用作升压电源开关。该控制电路采用 100V 电流模式 PWM 控制器 LM5020 来实现。评估板的规格如下：
- 输入工作电压：24V 至 66V
- 输出电压：75V
- 输出电流：2A
- 48V 时测得的效率：97% @ 2A
- 工作频率：500kHz
- (...)
PMP22510 — 开关型集成电容器降压 (SCIB) 转换器参考设计
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| SOT-23 (DBV) | 6 | Ultra Librarian |
| WSON (NGG) | 6 | Ultra Librarian |
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