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半桥驱动器

LM5104

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具有 8V UVLO 和自适应延迟的 2A、100V 半桥栅极驱动器

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数据表

LM5104

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产品详情

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm² (4 mm × 4 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.
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技术文档

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 LM5104 High-Voltage Half-Bridge Gate Driver With Adaptive Delay 数据表 (Rev. D) PDF | HTML 2014-12-16
应用手册 栅极驱动器单输入、死区时间和集成二极管特性的优势 PDF | HTML 英语版 PDF | HTML 2025-5-5
应用手册 使用半桥栅极驱动器实现高侧 FET 的 100% 占空比 PDF | HTML 英语版 PDF | HTML 2024-3-26
应用手册 双向直流/直流转换器中半桥栅极驱动器的挑战和解决方案 PDF | HTML 英语版 PDF | HTML 2024-1-25
应用手册 针对半桥配置的自举电路选择 (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2023-9-14
应用手册 比较分析两种不同的可提高栅极驱动电流的方法 (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2022-4-1
应用手册 适用于高频逆变器并采用 C2000 的电压馈电全桥直流/直流和直流/交流转换器 (Rev. D) PDF | HTML 英语版 (Rev.D) 2021-5-3
应用手册 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020-5-12
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020-4-29
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020-4-29
应用简报 Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019-10-22
应用手册 使用 UCC27282 来最大限度改善直流/直流转换器设计 英语版 2019-5-20
应用手册 UCC27282 Improving motor drive system robustness 2019-1-11
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018-10-29

设计与开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

仿真模型

LM5104 PSpice Transient Model (Rev. A)

SNVM164A.ZIP (49 KB) - PSpice 模型
支持的产品和硬件
仿真模型

LM5104 TINA-TI Transient Reference Design

SNVM339.TSC (536 KB) - TINA-TI 参考设计
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仿真模型

LM5104 TINA-TI Transient Spice Model

SNVM340.ZIP (10 KB) - TINA-TI Spice 模型
支持的产品和硬件
仿真模型

LM5104 Unencrypted PSpice Transient Model

SNVMAC6.ZIP (2 KB) - PSpice 模型
支持的产品和硬件
计算工具

SNVR521 — LM51xx Schematic Review Template

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封装 引脚 CAD 符号、封装和 3D 模型
WSON (DPR) 10 Ultra Librarian
SOIC (D) 8 Ultra Librarian
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