LM5105

正在供货

具有 8V UVLO 和可编程死区时间的 1.8、1.6A、100V 半桥栅极驱动器

产品详情

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.026 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.026 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm² 4 x 4
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

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类型 标题 下载最新的英语版本 日期
* 数据表 LM5105 100-V Half-Bridge Gate Driver With Programmable Dead Time 数据表 (Rev. E) PDF | HTML 2016年 8月 25日
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
白皮书 Power Electronics in Motor Drives: Where is it? (Rev. A) 2019年 10月 1日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日

设计和开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

仿真模型

LM5105 PSpice Transient Model (Rev. A)

SNVM166A.ZIP (49 KB) - PSpice Model
仿真模型

LM5105 TINA-TI Transient Reference Design

SNVM361.TSC (576 KB) - TINA-TI Reference Design
仿真模型

LM5105 TINA-TI Transient Spice Model

SNVM362.ZIP (11 KB) - TINA-TI Spice Model
仿真模型

LM5105 Unencrypted PSpice Transient Model

SNVMAC7.ZIP (2 KB) - PSpice Model
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  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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  • 封装厂地点

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