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半桥驱动器

LM5101B

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具有 8V UVLO 和 TTL 输入的 2A、100V 半桥栅极驱动器

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UCC27201A 正在供货 具有 8V UVLO、负电压处理能力和 TTL 输入的 120V、3A 半桥栅极驱动器 Newer, higher current version available with improved specs.

LM5101B

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产品详情

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 2 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 2 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) WSON (DPR) 10 16 mm² (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.
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技术文档

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers 数据表 (Rev. Q) PDF | HTML 2015-12-3
应用手册 使用半桥栅极驱动器实现高侧 FET 的 100% 占空比 PDF | HTML 英语版 PDF | HTML 2024-3-26
应用手册 双向直流/直流转换器中半桥栅极驱动器的挑战和解决方案 PDF | HTML 英语版 PDF | HTML 2024-1-25
应用手册 针对半桥配置的自举电路选择 (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2023-9-14
应用手册 了解并比较栅极驱动器的峰值电流能力 PDF | HTML 英语版 PDF | HTML 2022-5-19
应用手册 比较分析两种不同的可提高栅极驱动电流的方法 (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2022-4-1
应用手册 适用于高频逆变器并采用 C2000 的电压馈电全桥直流/直流和直流/交流转换器 (Rev. D) PDF | HTML 英语版 (Rev.D) 2021-5-3
应用手册 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020-5-12
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020-4-29
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020-4-29
应用简报 Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019-10-22
应用手册 使用 UCC27282 来最大限度改善直流/直流转换器设计 英语版 2019-5-20
应用手册 UCC27282 Improving motor drive system robustness 2019-1-11
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018-10-29
应用手册 AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B) 2018-5-4

设计与开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

评估板

UCC27288EVM — UCC27288 100V、3A、8V UVLO 半桥栅极驱动器评估模块

UCC27288EVM 适用于评估 UCC27288D，后者是一款具备 2.5A 峰值拉电流和 3.5A 峰值灌电流能力的 100V 半桥栅极驱动器。此 EVM 可用作驱动功率 MOSFET 的参考设计，驱动电压高达 20V。
用户指南: PDF
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仿真模型

LM5101B PSpice Transient Model

SNOM365.ZIP (77 KB) - PSpice 模型
支持的产品和硬件
仿真模型

LM5101B TINA-TI Transient Reference Design

SNOM357.TSC (780 KB) - TINA-TI 参考设计
支持的产品和硬件
仿真模型

LM5101B TINA-TI Transient Spice Model

SNOM358.ZIP (12 KB) - TINA-TI Spice 模型
支持的产品和硬件
仿真模型

LM5101B Unencrypted PSpice Transient Model

SNOM568.ZIP (2 KB) - PSpice 模型
支持的产品和硬件
计算工具

SNVR521 — LM51xx Schematic Review Template

支持的产品和硬件
参考设计

TIDA-01292 — 适用于低频离线 UPS 和逆变器的 650W 无散热器功率级参考设计

此参考设计是一款专为低频（基于变压器）单相 UPS (由 12V 电池供电) 设计的 650W 逆变器功率级。此设计采用 SON5x6 封装且具有极低 RDS(on) 和低栅极电荷 (Qg) 的 TI SMD MOSFET，可实现小外形尺寸和高效率的解决方案。通过在全桥功率级的每个桥臂上并联使用两个器件，该功率级消除了散热器需求，从而降低了总体系统成本。

支持的产品和硬件
封装 引脚 CAD 符号、封装和 3D 模型
SOIC (D) 8 Ultra Librarian
WSON (DPR) 10 Ultra Librarian
适用于评估类项目的 TI 标准条款与条件。

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