主页 电源管理 电源开关 固态继电器
主页
电源管理
电源开关
固态继电器
新

TPSI2240-Q1

预发布

具有增强隔离和雪崩防护功能的汽车级 1200V、50mA 隔离开关

立即订购
数据表

TPSI2240-Q1

预发布
数据表 立即订购

产品详情

FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses
      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1000VRMS / 1500VDC working voltage
    • Reinforced Isolation rating, VISO, up to 3750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses
      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1000VRMS / 1500VDC working voltage
    • Reinforced Isolation rating, VISO, up to 3750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA without requiring any external components.

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA without requiring any external components.
filter 查找其他 固态继电器
下载 观看带字幕的视频 视频

技术文档

star =有关此产品的 TI 精选热门文档
未找到结果。请清除搜索并重试。
查看全部 3
类型 标题 下载最新的英语版本 日期
* 数据表 TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection 数据表 PDF | HTML 2025年 9月 26日
EVM 用户指南 TPSI2240-Q1 评估模块 PDF | HTML 英语版 PDF | HTML 2025年 10月 23日
证书 TPSI2240Q1EVM EU Declaration of Conformity (DoC) 2025年 7月 1日

设计和开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

评估板

TPSI2240Q1EVM — TPSI2240-Q1 评估模块

TPSI2240Q1EVM 是包含多个测试点和跳线的硬件评估模块 (EVM)，用于评估 TPSI2240-Q1 的性能和功能。该评估模块包含测试和评估 TPSI2240-Q1 器件所需的材料，以便将器件无缝设计到更大的应用中，如电池管理系统。TPSI2240Q1EVM 可单独使用，也可选择与外部微控制器配对使用，用于驱动器件的使能信号。使用该 EVM 可以评估电介质耐压测试（又称高电势 (HiPot) 测试）和直流快充浪涌电流等应用需求，且无需外部保护元件。此 EVM 组装了采用 SOIC 封装的 TPSI2240-Q1。
用户指南: PDF | HTML
英语版: PDF | HTML
TI.com 上无现货
模拟工具

PSPICE-FOR-TI — PSpice® for TI 设计和仿真工具

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库，您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案，然后再进行布局和制造，可缩短产品上市时间并降低开发成本。 

在 PSpice for TI 设计和仿真工具中，您可以搜索 TI (...)
发送申请
封装 引脚 CAD 符号、封装和 3D 模型
SOIC (DWQ) 11 Ultra Librarian
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。

支持和培训

视频