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LMG3104R011

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具有集成驱动器、互锁和零电压检测功能的 100V 1.1mΩ GaN FET

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LMG3104R011

预发布
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产品详情

VDS (max) (V) 100 RDS(on) (mΩ) 1.1 ID (max) (A) 180 Features Built-in bootstrap diode, Cycle-by-cycle over-current protection, Overtemperature protection, Shoot-Through Protection, Short-circuit protection, Slew Rate Control, Top-side cooled, Undervoltage protection Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 100 RDS(on) (mΩ) 1.1 ID (max) (A) 180 Features Built-in bootstrap diode, Cycle-by-cycle over-current protection, Overtemperature protection, Shoot-Through Protection, Short-circuit protection, Slew Rate Control, Top-side cooled, Undervoltage protection Rating Catalog Operating temperature range (°C) -40 to 125
VQFN-FCRLF (VBE) 15 26 mm² 6.5 x 4
  • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
  • Integrated high-side level shift and bootstrap
    • Two LMG310xR0xx can form a half-bridge
    • No external level shifter is required
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (7ns)
    • Independent turn-on and turn-off slew-rate control for the GaN FET
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM (LMG3104R0xx)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for overtemperature, supply undervoltage, and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling
  • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
  • Integrated high-side level shift and bootstrap
    • Two LMG310xR0xx can form a half-bridge
    • No external level shifter is required
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (7ns)
    • Independent turn-on and turn-off slew-rate control for the GaN FET
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM (LMG3104R0xx)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for overtemperature, supply undervoltage, and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
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设计与开发

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评估板

LMG210XEVM-121 — LMG2104R044 评估模块

LMG210XR044 评估模块是一款具有外部 PWM 信号的紧凑且易于使用的功率级。该电路板可配置为降压转换器、升压转换器或其他使用半桥的转换器拓扑。该器件可用于评估 LMG210XR044 作为硬开关转换器的性能，以便对诸如效率、开关速度和 dv/dt（压摆率）等测量结果进行采样。该 EVM 集成了一个 LMG210XR044 半桥电源模块，后者具有两个由 80V GaN FET 半桥栅极驱动器驱动的 100V、4.4mΩ GaN FET。请勿用于评估瞬态响应，因为这是具有外部 PWM 信号的开环板。该 EVM 安装有 LMG2104R044 器件。
用户指南: PDF | HTML
英语版 (Rev.A): PDF | HTML
TI.com 上无现货
评估板

LMG210XEVM-143 — LMG2104R022 评估模块

LMG210XR022 评估模块 (EVM) 是一款具有外部 PWM 信号的紧凑且易于使用的功率级。该电路板可配置为降压转换器、升压转换器或其他使用半桥的转换器拓扑。该 EVM 可用于评估 LMG210XR022 作为硬开关转换器的性能，以便对诸如效率、开关速度和 dv/dt（压摆率）等测量结果进行采样。该 EVM 集成了一个 LMG210XR022 半桥电源模块，后者具有两个由 80V GaN FET 半桥栅极驱动器驱动的 100V、2.2mΩ GaN FET。请勿用于评估瞬态响应，因为这是具有外部 PWM 信号的开环板。此 EVM 搭载 LMG2104R022 器件。
用户指南: PDF | HTML
英语版 (Rev.A): PDF | HTML
TI.com 上无现货
评估板

LMG3100EVM-089 — LMG3100 评估模块

LMG3100 评估模块 (EVM) 是一款具有外部 PWM 信号的紧凑且易于使用的功率级。该电路板可配置为降压转换器、升压转换器或其他使用半桥的转换器拓扑。该 EVM 具有两个 LMG3100 电源模块，每个模块均配有一个带集成驱动器的 100V 1.7mΩ GaN FET。
用户指南: PDF | HTML
英语版: PDF | HTML
TI.com 上无现货
封装 引脚 CAD 符号、封装和 3D 模型
VQFN-FCRLF (VBE) 15 Ultra Librarian
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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