ZHCU763 March   2021

 

  1.   说明
  2.   资源
  3.   特性
  4.   应用
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Multichannel SSR with Independent Isolation Between SSR Channels
      2. 2.2.2 Design Challenge With Single Isolation
      3. 2.2.3 Multichannel SSR Drive With Single Isolation Multichannel Digital Isolator
      4. 2.2.4 Need of High-Impedance Voltage Translator
      5. 2.2.5 Design to Minimize Cross-Coupling and MOSFET Gate Pick up Due to Other SSR Switching
      6. 2.2.6 Schematic: Design of Gate-Drive Circuit
        1. 2.2.6.1 Calculation of Gate-Driver Power Consumption
      7. 2.2.7 Schematic: Digital Isolator Circuit
      8. 2.2.8 Schematic: 3.3 V to 10V_ISO, 5V_ISO Power Supply
    3. 2.3 Highlighted Products
      1. 2.3.1 ISO7760
      2. 2.3.2 ISO7740
      3. 2.3.3 ISO7041
      4. 2.3.4 CSD19538Q2
      5. 2.3.5 CSD17382F4
      6. 2.3.6 TPL7407LA
      7. 2.3.7 TLV760
      8. 2.3.8 TLC555
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 Test Equipment Needed to Validate Board
      2. 3.1.2 Test Conditions
      3. 3.1.3 Test Procedure
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Functional Tests
      2. 3.3.2 Overcurrent Testing With External Fuse
      3. 3.3.3 Surge Testing
      4. 3.3.4 Multichannel SSR Driven From Two 24-VAC Transformers
      5. 3.3.5 Alternate SSR Topology for High Voltage
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 支持资源
    4. 4.4 Trademarks
  10. 5About the Author

2.3.4 CSD19538Q2

The CSD19538Q2 device is a 100-V, 49-mΩ, SON 2-mm × 2-mm NexFET™ power MOSFET. The device could be the right fit for realizing the back-to-back connected power MOSFETs in the SSR. The device ensures enough voltage margin for a 24-VAC powered SSR with continuous current within 2 A. The MOV, or, TVS diode, or both are used at the 24-VAC line to protect against surge, or EFT, or inductive switch spikes can have a clamp voltage as high as 65 V and a 100-V MOSFET ensure proper design margins here.