SLVK304 April   2026 TMUX182-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 Single-Event Latch-up (SEL) Results
    2. 5.2 Single-Event Transients (SET) Results
  9. 6Summary
  10. 7References

6 Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the TMUX182-SEP radiation-tolerant general purpose complementary metal-oxide semiconductor (CMOS) multiplexer (MUX). The device works with a single supply (5V to 15V), dual supplies (up to ±6V), or asymmetric supplies (such as VDD = 6V, VSS = –3V). The wide supply voltage range allows the devices to be used in a broad array of applications in space.

The TMUX182-SEP supports bidirectional analog signals on the source (Sx) and drain (Dx) pins ranging from VSS to VDD. All logic inputs have 1.8V logic compatible thresholds, which is compatible for both TTL and CMOS logic when operating with a valid supply voltage. SEE performance was verified at minimum (5V) and maximum (6V) for dual-rail operating condition and maximum (15V) for single-rail operating condition. Heavy-ions with an LETEFF of 47MeV-cm2/mg were used to irradiate five production devices with a fluence of 1 × 107 ions/cm2. The results demonstrate that the TMUX182-SEP is SEL-free up to LETEFF = 47MeV-cm2/mg as 125°C. SET performance at 5V operating voltages saw excursions, as shown and discussed in this report.