A fresh DUTs were used for SET characterization. The conditions for each run are summarized on Table 5-4 below. The run numbers listed are the acutal run numbers from the testing session, and the flux, fluence, and dose silicon foreach run are pulled forn the test session log provided by the Texas A & M K500 Cyclotron facility.

Unit SET_DUT6 was configured with a gain of 100V/V using a RG resistor of 499Ω. The device was tested at maximum specified supply voltage range of ±9V (or 18V total supply) and input common mode voltage (V_CM) of ±5V with a input differential voltage V_DIFF of ±50mV. The REF pin was biased at mid-supply (0V). The device output channel was loaded with a 2kΩ resistance to GND (mid-supply). Tests were repeated at a supply voltage of ±2.5V (or 5V total supply) with V_CM =±0.4V and V_DIFF of ±10mV.

Since the device was set on a high gain of 100V/V, the instrumentation amplifier output amplifies extrinsic noise present in the test environment. The oscilloscopes were set to a window trigger mode that captured any events where the output shifted by ±200mV or more.

The INA1H182-SEP devices were exposed to LET levels varying from 46.7MeV-cm²/mg to 1.33MeV-cm²/mg. An ambient temperature of approximately 25°C was recorded in the facility at the time of these tests. Test runs 39 - 46 involved the testing of a different product not related to the INA1H182-SEP, and therefore are excluded in this report.

Figure 5-6 Device Under Test Lined Up With the Beam

A separate SET testing session was performed with 3 additional fresh devices at the MSU Facility for Rare Isotope Beams (FRIB) using a linear particle accelerator ion source. The run numbers listed are the actual run numbers from the testing session, and the flux, fluence, and dose silicon for each run are pulled from the test session log provided by the MSU FRIB Linac facility. A summary of the conditions in test runs performed is provided on Table 5-5.

Devices were tested up at the operating supply of ±9V with different gains of 1V/V, 20V/V, 50V/V and 100V/V. The devices were exposed to a LET level of 50.4MeV-cm²/mg. The oscilloscope card was set to a window trigger mode that captured any events where the output shifted by ±200mV or more.