SLVK280 March   2026 INA1H182-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Circuits and Boards
    2. 4.2 Characterization Devices and Test Board Schematics
  8. 5Results
    1. 5.1 SEL Qualification Results: TAMU Cyclotron Radiation Effects Facility
    2. 5.2 SET Characterization Results
    3. 5.3 Analysis
  9. 6Summary
  10.   A Transient Results Appendix
  11.   B References

4 Test Device and Test Board Information

The INA1H182-SEP is packaged in an 8-pin VSSOP (DGK) package. Figure 4-1 shows the pinout diagram. The package lid was removed to reveal the die face for all heavy ion testing.

INA1H182-SEP Pinout DiagramFigure 4-1 INA1H182-SEP Pinout Diagram

Each device under test (DUT) used in INA1H182-SEP qualification studies came from the same wafer fab and assembly lot and were used for single-event effect qualification and characterization. Across the SEL, SET, and absolute-maximum supply extended SEL characterization tests performed, five different devices were evaluated. Some lookahead testing was also performed on units from different assembly lots, and had no significant differences observed in the test results.