SLVK280 March   2026 INA1H182-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Circuits and Boards
    2. 4.2 Characterization Devices and Test Board Schematics
  8. 5Results
    1. 5.1 SEL Qualification Results: TAMU Cyclotron Radiation Effects Facility
    2. 5.2 SET Characterization Results
    3. 5.3 Analysis
  9. 6Summary
  10.   A Transient Results Appendix
  11.   B References

6 Summary

Single-event effects of the INA1H182-SEP radiation-hardened, high common-mode voltage difference amplifier were studied. The device was shown through characterization to be latch-up immune up to surface LETEFF = 43MeV-cm2/mg and T = 125°C.