SLVK280 March   2026 INA1H182-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Circuits and Boards
    2. 4.2 Characterization Devices and Test Board Schematics
  8. 5Results
    1. 5.1 SEL Qualification Results: TAMU Cyclotron Radiation Effects Facility
    2. 5.2 SET Characterization Results
    3. 5.3 Analysis
  9. 6Summary
  10.   A Transient Results Appendix
  11.   B References

Abstract

Studies were performed to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the INA1H182-SEP radiation-tolerant, low offset, low-noise, radiation-tolerant, high-precision instrumentation amplifier. For device qualification, heavy ions with an LETEFF of 45.9MeV-cm2/mg were used to irradiate the devices with a fluence of 1 × 107 ions/cm2. The results demonstrated that the INA1H182-SEP is SEL-free up to the specified surface LETEFF = 43MeV-cm2/mg at 125°C.

Characterization of single-event transients (SET) and correlation testing of SEL were also performed, up to a surface LETEFF = 45.9MeV-cm2/mg at 25°C.