SLVK265 March   2026 TRF0108-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Set-Up and Procedures
  10. 7 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET) Results
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

2 Single-Event Effects

The primary concern for the TRF0108-SEP is resilience against destructive single-event effects (DSEE), such as single-event latch-up (SEL) and single-event burnout (SEB). Since the operating voltage of TRF0108-SEP is relatively low, 5V, SEB is not a concern.

The TRF0108-SEP was characterized for SEL events. In mixed technologies, such as the BiCMOS process used for the TRF0108-SEP, the presence of the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts) [7][6]. If formed, the parasitic bipolar structure creates a high-conductance path (creating a steady-state current that is orders of magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The TRF0108-SEP exhibited no SEL with heavy-ions of up to LETEFF = 56.1MeV-cm2/mg at fluences in excess of 107 ions/cm2 and a die temperature of 125°C.

Another concern for high reliability and performance applications is the single-event transient (SET) characteristic of the device. The TRF0108-SEP SET performance was characterized up to LETEFF = 56.1MeV-cm2/mg. The device was characterized for SET at +5V supply voltage under AC input conditions. Test conditions and results are discussed in Section 8.