SLVK261 April   2026 TPS7H6101-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Single-Event Latch-up (SEL) Results

During the SEL characterization, the device was heated to 125°C by using a closed-loop PID controlled heat gun (MISTRAL 6 System [120V, 2400W]). The temperature of each exposed die was constantly monitored during testing at TAMU through an IR camera integrated into the control loop to create closed-loop temperature control, while at KSEE, a standalone FLIR thermal camera was used to verify temperature prior to exposure.

The species used for SEL testing was Silver (109Ag at 15MeV/nucleon and 19.5MeV/nucleon at TAMU and KSEE, respectively). For both ions, an incident angle of 0° was used to achieve an LETEFF = 48MeV·cm2/mg (for more details refer to Section 5). The kinetic energy in the vacuum for 109Ag is 1.633GeV and 2.123GeV for TAMU and KSEE, respectively. A flux of 9.54 × 104 to 1.11 × 105 ions/cm2/s and a fluence of approximately 107 ions/cm2 per run was used. Run duration to achieve this fluence was approximately two minutes. The six units were powered up and exposed to the heavy-ions using a PVIN voltage of 150V. No SEL events were observed during all nine runs, indicating that the TPS7H6101-SEP is SEL-free up to 48MeV·cm2/mg. Table 8-4 shows the SEL test conditions and results. Figure 7-1 and Figure 7-2 show plots of the current versus time for runs number 1 and number 5.

Table 7-1 Summary of TPS7H6101-SEP SEL Test Condition and Results
Run

Number

Unit

Number

Facility

Exposed Section

ION LETEFF (MeV·cm2/mg) FLUX (ions/cm2

/s)

FLUENCE

(ions/cm2)

PVIN (V)

VOUT (V)

IOUT (A)

SEL (Number of Events)

1 1

TAMU

Driver

109Ag

47.7

1.09 × 105

1 × 107

150

28

10

0

2 2

TAMU

Driver

109Ag

47.7

1.08 × 105

1 × 107 150

28

10

0

3 3

TAMU

GaN

109Ag

47.7

1.11 × 105

1 × 107 150

28

10

0

4

4

KSEE

Driver

109Ag

49.1

9.96 × 104 1 × 107 150

28

10

0

5

5

KSEE

GaN 109Ag

49.1

9.54 × 104 1 × 107 150

28

10

0

6

6

KSEE

GaN 109Ag

49.1

9.38 × 104 1 × 107 150

28

10

0

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report and combining (or summing) the fluences of the six runs at 125°C (6 × 107), the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEL ≤ 6.15 × 10-8 cm2/device for LETEFF = 48MeV·cm2/mg and T = 125°C.

 Driver current vs Time for SEL Run #1 (Driver Exposed) of the TPS7H6101-SEP at T = 125°CFigure 7-1 Driver current vs Time for SEL Run #1 (Driver Exposed) of the TPS7H6101-SEP at T = 125°C
 GaN Current Versus Time for SEL Run #5 (GaN Exposed) of the TPS7H6101-SEP at T = 125°CFigure 7-2 GaN Current Versus Time for SEL Run #5 (GaN Exposed) of the TPS7H6101-SEP at T = 125°C