SLVK261 April   2026 TPS7H6101-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H6101-SEP. Heavy-ions with LETEFF of 48MeV·cm2/mg were used to irradiate six devices. Flux of 8.13 × 104 to 1.18 × 105ions/cm2/s and fluence of approximately 107ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H6101-SEP is SEL-free up to 48MeV·cm2/mg at T = 125°C and SEB/SEGR-free up to 48MeV·cm2/mg at T = 25°C. Output signals including VOUT (3% window) and SW (20% pulse-width) were monitored to check for transients and SEFIs. The device showed to be SET and SEFI free up to 48MeV·cm2/mg at T = 25°C.