SLVK261 April   2026 TPS7H6101-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

5 LETEFF and Range Calculation

Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H6101-SEP [Left] and SEUSS 2024 Application Used to Determine Key Ion Parameters [Right] Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H6101-SEP [Left] and SEUSS 2024 Application Used to Determine Key Ion Parameters [Right]

The TPS7H6101-SEP driver is fabricated in the TI LinBiCMOS 250nm process with a 4LM back-end-of-line (BEOL) stack. The total stack height from the surface of the passivation to the silicon surface is 10.9μm based on nominal layer thickness as shown in Figure 5-1.

Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the TPS7H6101-SEP, the effective LET (LETEFF) at the surface of the silicon substrate and the range was determined with:

  • SEUSS 2024 software (provided by TAMU and based on the latest SRIM-2013 [7] models)
  • MSU Stack-Up Calculator (provided by MSU FRIB and based on latest SRIM-2013 [7] models)

The results are shown in Table 5-1.

Table 5-1 Ion LETEFF and Range in Silicon

Facility

Beam Energy (MeV/nucleon)

Ion Type

Degrader Steps (#)

Degrader Angle (°)

Copper Foil Width (μm)

Beam Port Window

Air Gap (mm)

 Angle

of Incidence

 LETEFF (MeV·cm2/mg)

Range (μm)

TAMU

15

109Ag

0

0

-

1-mil Aramica

40

0

47.7

94.2

KSEE

19.5

109Ag

-

-

5

3-mil PEN

50

0

49.1

86.6
SEUSS 2024 Application Used to Determine Key Ion Parameters for enhancement mode Gallium Nitride (e-mode GaN) Figure 5-2 SEUSS 2024 Application Used to Determine Key Ion Parameters for enhancement mode Gallium Nitride (e-mode GaN)

Backgrinding was performed on the TPS7H6101-SEP e-mode GaN power stage to leave 50μm of bulk Si above the die. Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the bulk Si, the surface LET and the range was determined using:

  • SEUSS 2024 software (provided by TAMU and based on the latest SRIM-2013 [7] models)
  • MSU Stack-Up Calculator (provided by MSU FRIB and based on latest SRIM-2013 [7] models)

The results are shown in Table 5-1.

Table 5-2 Ion Surface LET and Range in Gallium Nitride (GaN)
Facility Beam Energy (MeV/nucleon) Ion Type Degrader Steps (#) Degrader Angle (°) Copper Foil Width (μm) Beam Port Window Air Gap (mm) Angle of Incidence

Surface LET (MeV·cm2/mg)

 Range (μm)
TAMU 15 109Ag 0 0 - 1-mil Aramica 40 0 43.3 29.1
KSEE 19.5 109Ag - - 5 3-mil PEN 50 0 43.51 28.9