SLVK261 April   2026 TPS7H6101-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

1 Introduction

The TPS7H6101-SEP is a radiation-tolerant 200V, 10A, power stage incorporating two enhancement mode gallium nitride (e-mode GaN) with an integrated half-bridge gate driver. The incorporated gate driver has features such as low propagation delay, configurable dead time control and shoot through interlock protections, and two operational modes. Additionally, the integration of the e-mode GaN FETs and gate driver simplifies the design and reduces component count as well as board space, making the device appropriate for space satellite power management and distribution.

The device is offered in a 12mm by 9mm 64-pin LGA package. General device information and test conditions are listed in the overview information table. For more detailed technical specifications, user-guides, and application notes, please go to device product page.

Table 1-1 Overview Information
DESCRIPTION(1)DEVICE INFORMATION
TI Part NumberTPS7H6101-SEP
Orderable Part Number

TPS7H6101MNPRNSEP

Device FunctionPWM controller with integrated gate driver
TechnologyDriverLBC7 (LinBiCMOS™ 7)
Power stageE-mode GaN
Exposure FacilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University (15MeV/nucleon) and Facility for Rare Istotope Beams, K500 Cyclotron (KSEE), Michigan State University (19.5MeV/nucleon)
Heavy Ion Fluence per Run1.00 × 107 ions/cm2
Irradiation Temperature25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.