SBOK111 June   2025 SN55LVTA4-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagram
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8.   Appendix A: ELDRS Data
  9.   Appendix B: HDR TID Report Data
  10.   Appendix C: LDR TID Report Data

Device Details

Table 1-1 lists the device information used for TID HDR and LDR characterization and qualification.

Table 1-1 Device and Exposure Details
TID HDR/LDR Details: Up To 30krad(Si)
TI Device NumberSN55LVTA4-SEP

VID Number

V62/25605

Package16-pin D(SOIC)
TechnologyLIN3B
Die Lot Number4045683FFB
A/T Lot Number and Date Code4892754ML4 / 4CC3E9K
Quantity Tested20 irradiated devices + 2 control
Lot Accept or RejectDevices passed 30krad(Si)
HDR Radiation FacilityTexas Instruments CLAB in Dallas, Texas

LDR Radiation Facility

VPT in Chelmsford, Massachusetts

HDR Dose Level10krad(Si), 20krad(Si), 30krad(Si)
HDR Dose Rate169.21rad(Si)/s ionizing radiation

LDR Dose Level

10krad(Si), 20krad(Si), 30krad(Si)

LDR Dose Rate

8.21mrad(Si)/s ionizing radiation

HDR Radiation SourceGammacell 220 Excel (GC-220E) Co-60

LDR Radiation Source

Broad Beam facility consisting of a 16' x 12' radiation vault housing a cobalt-60 gamma beam irradiator

Irradiation TemperatureAmbient, room temperature