SBOK111 June   2025 SN55LVTA4-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagram
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8.   Appendix A: ELDRS Data
  9.   Appendix B: HDR TID Report Data
  10.   Appendix C: LDR TID Report Data

Abstract

This report covers the radiation characterization results of the SN55LVTA4-SEP, radiation tolerant high-speed differential line driver. The study was done to determine Total Ionizing Dose (TID) effects under high dose rate (HDR) and low dose rate (LDR) up to 30krad(Si) as a one time characterization. The results show that all samples passed within the specified limits up to 30krad(Si). It was determined that the device did not exhibit Enhanced Low Dose Radiation Sensitivity (ELDRS). The data shows that HDR produces the worst-case parametric shifts and therefore will be used for Radiation Lot Acceptance Testing (RLAT). RLAT will be performed using 5 units at a dose level of 30krad(Si) for future wafer lots per MIL-STD-883 TM 1019. All future wafer lots will be tested under the same conditions. HDR TID response is the worst case. TID HDR characterization was performed per TM 1019.

The SN55LVTA4-SEP is packaged in a space enhanced plastic package for low outgassing characteristics and is Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg, which makes the device an option for low Earth orbit space applications. Single Event Transient (SET) data is also provided in the Single Event Effects Radiation Report.