SBOK111 June   2025 SN55LVTA4-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagram
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8.   Appendix A: ELDRS Data
  9.   Appendix B: HDR TID Report Data
  10.   Appendix C: LDR TID Report Data

2.4 Test Configuration and Condition

A step stress (10k, 20k, and 30k) test method was used to determine the TID hardness level. That is, after a predetermined TID level was reached, an electrical test was performed on a given sample of parts to verify that the units are within specified data sheet electrical test limits. The HDR RLAT units were irradiated to 30krad(Si), and parametrically tested on ATE. The units that were irradiated to 30krad(Si) and the data is shown in Appendix B.

Table 2-1 and Table 2-1 list the serialized samples used for TID characterization.

Table 2-1 HDR Device Information
Control GroupHDR Dose Rate = 169.21rad(Si)/s
Total Samples: 2Total Samples: 15 Biased
Exposure Levels
0krad (Si)10krad (Si)20krad(Si)30krad(Si)
BiasedBiasedBiasedBiased
1 - 23 - 78 - 1213- 17
Table 2-2 LDR Device Information
Control Group LDR Dose Rate = 8.21mrad(Si)/s
Total Samples: 2 Total Samples: 5 Biased
Exposure Levels
0krad (Si) 10krad (Si) 20krad(Si) 30krad(Si)
Biased Biased Biased Biased
1 - 2 18 - 22 18 - 22 18- 22