SBAK047 March   2025 ADC3664-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Irradiation Facility and Setup
  7. 4Depth, Range, and LETEFF Calculation
  8. 5Test Setup and Procedures
  9. 6Destructive Single-Event Effects (DSEE)
    1. 6.1 Single-Event Latch-Up (SEL) Results
  10. 7Single-Event Transients (SET)
    1. 7.1 Single Event Transients
  11. 8Summary
  12. 9References

9 References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. Texas Instruments, Radiation Handbook for Electronics, e-book.
  4. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility, webpage.
  5. Ziegler, James F. SRIM- The Stopping and Range of Ions in Matter, webpage.
  6. D. Kececioglu, Reliability and Life Testing Handbook, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.