ZHCSI09S June 2010 – August 2018 TPS65911
This controller is designed to drive two n-channel MOSFETs. Typically, lower RDS(on) values are better for improving the overall efficiency of the controller, however higher gate-charge thresholds result in lower efficiency so these two values must be balanced for optimal performance. As the RDS(on) for the low-side FET decreases, the minimum current limit increases. Therefore, make sure the appropriate values are selected for the FETs, inductor, output capacitors, and current limit resistor. The Texas Instruments' CSD87330Q3D device is a recommended for the controller, depending on the required maximum current.