ZHCSK83B September   2019  – July 2021 TMCS1100

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Typical Characteristics
      1. 7.10.1 Insulation Characteristics Curves
  8. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 Reference Voltage Rejection Ratio
      7. 8.1.7 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Input Isolation
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
        3. 9.3.3.3 Frequency Response
        4. 9.3.3.4 Transient Response
      4. 9.3.4 External Reference Voltage Input
      5. 9.3.5 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

3 说明

TMCS1100 是一款电隔离霍尔效应电流传感器，能够测量直流或交流电流，并具有高精度、出色的线性度和温度稳定性。低漂移、温度补偿信号链可以在器件的温度范围内实现 < 1% 的满量程误差。

输入电流流经内部 1.8mΩ 导体时，此导体产生的磁场可由集成式霍尔效应传感器进行测量。这种结构省去了外部集中器并简化了设计。低导体电阻可更大限度减少功率损耗和热耗散。固有的电镀绝缘在电流路径与电路之间提供了 600V 使用寿命内工作电压和 3kVRMS 基本型隔离。集成式电气屏蔽可提供出色的共模抑制和瞬态抗扰度。

输出电压与输入电流成正比，并具有四个灵敏度选项。固定的灵敏度允许 TMCS1100 使用单个 3V 至 5.5V 的电源运行，因此消除了比例式误差并提高了电源噪声抑制能力。当电流流入到正输入引脚时，电流极性被视为正极。VREF 输入引脚提供了一个可变零电流输出电压，允许进行双向或单向电流检测。。

TMCS1100 消耗的最大电源电流为 6mA，所有灵敏度选项的额定工作温度范围均为 -40°C 至 +125°C。

器件信息(1)
器件型号 封装 封装尺寸（标称值）
TMCS1100 SOIC (8) 4.90mm × 3.90mm
(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。
GUID-A9CC67B9-0B56-44F4-B832-2FFB3D721697-low.gif 典型应用