SNOSDA7B August   2020  – April 2021 LMG3425R030

ADVANCE INFORMATION  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
  8. Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Delays
      2. 8.1.2 Turn-Off Delays
      3. 8.1.3 Drain Slew Rate
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Direct-Drive GaN Architecture
      2. 9.3.2 Drain-Source Voltage Capability
      3. 9.3.3 Internal Buck-Boost DC-DC Converter
      4. 9.3.4 VDD Bias Supply
      5. 9.3.5 Auxiliary LDO
      6. 9.3.6 Fault Detection
        1. 9.3.6.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.6.2 Overtemperature Shutdown
        3. 9.3.6.3 UVLO Protection
        4. 9.3.6.4 Fault Reporting
      7. 9.3.7 Drive Strength Adjustment
      8. 9.3.8 Temperature-Sensing Output
      9. 9.3.9 Sync-FET Mode Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Power Loop Inductance
      2. 12.1.2 Signal Ground Connection
      3. 12.1.3 Bypass Capacitors
      4. 12.1.4 Switch-Node Capacitance
      5. 12.1.5 Signal Integrity
      6. 12.1.6 High-Voltage Spacing
      7. 12.1.7 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
  • RQZ|54
散热焊盘机械数据 (封装 | 引脚)
订购信息

Features

  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3425R030