over operating free-air temperature range (unless otherwise noted)(1)
|
MIN |
MAX |
UNIT |
DRN to SRC |
-5 |
100 |
V |
DRN to SRC (pulsed, 100-ms max duration)(2) |
|
120 |
V |
HB to AGND |
-0.3 |
100 |
V |
HS to AGND |
-5 |
93 |
V |
HI to AGND |
-0.3 |
6 |
V |
LI to AGND |
-0.3 |
6 |
V |
VCC to AGND |
-0.3 |
6 |
V |
HB to HS |
-0.3 |
6 |
V |
HB to VCC |
0 |
93 |
V |
IOUT from DRN pin (Continuous), TJ = 25℃ |
|
97 |
A |
IOUT from DRN pin (Pulsed, 300 µs), TJ = 25℃ |
|
350 |
A |
Junction Temperature, TJ |
-40 |
150 |
°C |
Storage Temperature, Tstg |
-40 |
150 |
°C |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) GaN FET can withstand 1000 pulses up to 120V of 100ms duration and less than 1% duty cycle over its lifetime.