ZHCS547K January   2010  – February 2018 LM27402

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用电路
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Wide Input Voltage Range
      2. 7.3.2  UVLO
      3. 7.3.3  Precision Enable
      4. 7.3.4  Soft-Start and Voltage Tracking
      5. 7.3.5  Output Voltage Setpoint and Accuracy
      6. 7.3.6  Voltage-Mode Control
      7. 7.3.7  Power Good
      8. 7.3.8  Inductor-DCR-Based Overcurrent Protection
      9. 7.3.9  Current Sensing
      10. 7.3.10 Power MOSFET Gate Drivers
      11. 7.3.11 Pre-Bias Start-up
    4. 7.4 Device Functional Modes
      1. 7.4.1 Fault Conditions
        1. 7.4.1.1 Thermal Protection
        2. 7.4.1.2 Current Limit
        3. 7.4.1.3 Negative Current Limit
        4. 7.4.1.4 Undervoltage Threshold (UVT)
        5. 7.4.1.5 Overvoltage Threshold (OVT)
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Converter Design
      2. 8.1.2  Inductor Selection (L)
      3. 8.1.3  Output Capacitor Selection (COUT)
      4. 8.1.4  Input Capacitor Selection (CIN)
      5. 8.1.5  Using Precision Enable
      6. 8.1.6  Setting the Soft-Start Time
      7. 8.1.7  Tracking
      8. 8.1.8  Setting the Switching Frequency
      9. 8.1.9  Setting the Current Limit Threshold
      10. 8.1.10 Control Loop Compensation
      11. 8.1.11 MOSFET Gate Drivers
      12. 8.1.12 Power Loss and Efficiency Calculations
        1. 8.1.12.1 Power MOSFETs
        2. 8.1.12.2 High-Side Power MOSFET
        3. 8.1.12.3 Low-Side Power MOSFET
        4. 8.1.12.4 Gate-Charge Loss
        5. 8.1.12.5 Input and Output Capacitor ESR Losses
        6. 8.1.12.6 Inductor Losses
        7. 8.1.12.7 Controller Losses
        8. 8.1.12.8 Overall Efficiency
    2. 8.2 Typical Applications
      1. 8.2.1 Example Circuit 1
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design With WEBENCH® Tools
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Example Circuit 2
      3. 8.2.3 Example Circuit 3
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Power Stage Layout
      2. 10.1.2 Gate Drive Layout
      3. 10.1.3 Controller Layout
      4. 10.1.4 Thermal Design and Layout
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 开发支持
        1. 11.1.2.1 使用 WEBENCH® 工具创建定制设计
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.1.12.1 Power MOSFETs

Selecting the correct power MOSFET for a design is important to the overall operation of the circuit. If inappropriate MOSFETs are selected for the application, it may result in poor efficiency, high temperature issues, shoot-through and other impairments. It is important to calculate the power dissipation for each MOSFET at the maximum output current and ensure that the maximum allowable power dissipation is not exceeded. MOSFET data sheets must also specify a junction-to-ambient thermal resistance (θJA), and the temperature rise is estimated from this specification.

Both high-side and low-side MOSFETs contribute significant loss to the system relative to the other components. The high-side MOSFET contributes transition switching loss, conduction loss and gate charge loss. The low-side MOSFET also contributes conduction and gate charge loss, and the body diode of the MOSFET causes deadtime conduction loss and reverse recovery loss that must also be considered. The transition losses for the low-side MOSFET are insignificant and usually ignored.