ZHCSNV5 October   2021 LM117HVQML-SP

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Related Products
  6. Pin Configurations and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Parameter Drift
    7. 7.7 Quality Conformance Inspection
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 Simplified Device Schematic
    3. 8.3 Feature Description
      1. 8.3.1 Setting Output Voltage
      2. 8.3.2 Load Regulation
      3. 8.3.3 External Capacitors
      4. 8.3.4 Protection Diodes
  9. Application and Implementation
    1. 9.1 Typical Applications
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Layout Guidelines

Ensure wide enough traces for those carrying the load current in order to reduce the amount of parasitic trace inductance. Keep the feedback loop from VOUT to ADJ as short as possible. To improve PSRR, a bypass capacitor can be placed at the ADJ pin and must be located as close as possible to the IC. In cases when VIN shorts to ground, an external diode must be placed from VOUT to VIN to divert the surge current from the output capacitor and protect the IC. Similarly, in cases when a large bypass capacitor is placed at the ADJ pin and VOUT shorts to ground, an external diode must be placed from ADJ to VOUT to provide a path for the bypass capacitor to discharge. These diodes must be placed close to the corresponding LM117HVQML-SP pins to increase their effectiveness.