ZHCSEI7B December 2015 – December 2017 CSD95377Q4M
PRODUCTION DATA.
An external VDD voltage is required to supply the integrated gate driver IC and provide the necessary gate drive power for the MOSFETs. TI recommends a 1-µF, 10-V, X5R or higher ceramic capacitor to bypass VDD pin to PGND. A bootstrap circuit to provide gate drive power for the control FET is also included. The bootstrap supply to drive the control FET is generated by connecting a 100-nF, 16-V, X5R ceramic capacitor between BOOT and BOOT_R pins. An optional RBOOT resistor can be used to slow down the turnon speed of the control FET and reduce voltage spikes on the VSW node. A typical 1-Ω to 4.7-Ω value is a compromise between switching loss and VSW spike amplitude.