ZHCSEO0B February   2016  – April 2018 CSD87335Q3D

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     俯视图
      1.      Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Applications and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
    2. 6.2 Power Loss Curves
    3. 6.3 Safe Operating Curves (SOA)
    4. 6.4 Normalized Curves
    5. 6.5 Calculating Power Loss and SOA
      1. 6.5.1 Design Example
      2. 6.5.2 Calculating Power Loss
      3. 6.5.3 Calculating SOA Adjustments
  7. 7Recommended PCB Design Overview
    1. 7.1 Electrical Performance
    2. 7.2 Thermal Performance
  8. 8器件和文档支持
    1. 8.1 接收文档更新通知
    2. 8.2 社区资源
    3. 8.3 商标
    4. 8.4 静电放电警告
    5. 8.5 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 Q3D 封装尺寸
    2. 9.2 焊盘布局建议
    3. 9.3 模板建议
    4. 9.4 Q3D 卷带信息
    5. 9.5 引脚配置

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS Q1 Control FET Q2 Sync FET UNIT
MIN TYP MAX MIN TYP MAX
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 30 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 1 µA
IGSS Gate-to-source leakage current VDS = 0 V,
VGS = +10 V / –8 V		 100 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 1.0 1.9 0.75 1.20 V
ZDS(on) Effective AC on-impedance VIN = 12 V, VGS = 5 V, VOUT = 1.3 V, IOUT = 15 A, ƒSW = 500 kHz,
LOUT = 950 nH		 6.7 1.9 mΩ
gfs Transconductance VDS = 3 V, IDS = 15 A 59 107 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		 805 1050 1620 2100 pF
COSS Output capacitance 412 536 783 1020 pF
CRSS Reverse transfer capacitance 15 20 28 36 pF
RG Series gate resistance 1.2 2.4 0.6 1.2 Ω
Qg Gate charge total (4.5 V) VDS = 15 V,
IDS = 15 A		 5.7 7.4 10.7 14.0 nC
Qgd Gate charge – gate-to-drain 1.1 1.7 nC
Qgs Gate charge – gate-to-source 2.1 2.8 nC
Qg(th) Gate charge at Vth 1.1 1.4 nC
QOSS Output charge VDS = 15 V, VGS = 0 V 11 19 nC
td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V,
IDS = 15 A, RG = 2 Ω		 8 8 ns
tr Rise time 29 27 ns
td(off) Turnoff delay time 13 17 ns
tf Fall time 4 5 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 15 A, VGS = 0 V 0.8 1.0 0.8 1.0 V
Qrr Reverse recovery charge VDS = 15 V, IF = 15 A,
di/dt = 300 A/µs		 24 40 nC
trr Reverse recovery time 17 22 ns

CSD87335Q3D RthjaMAX.png
Max RθJA = 73°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD87335Q3D RthjaMIN.png
Max RθJA = 135°C/W when mounted on minimum pad area of 2-oz. (0.071-mm) thick Cu.