ZHCSSG0B December   2022  – April 2024 CC1314R10

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 功能方框图
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagram—RGZ Package (Top View)
    2. 6.2 Signal Descriptions—RGZ Package
    3. 6.3 Connections for Unused Pins and Modules—RGZ Package
    4. 6.4 Pin Diagram—RSK Package (Top View)
    5. 6.5 Signal Descriptions—RSK Package
    6. 6.6 Connection of Unused Pins and Module—RSK Package
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Power Supply and Modules
    5. 7.5  Power Consumption—Power Modes
    6. 7.6  Power Consumption—Radio Modes
    7. 7.7  Nonvolatile (Flash) Memory Characteristics
    8. 7.8  Thermal Resistance Characteristics
    9. 7.9  RF Frequency Bands
    10. 7.10 861MHz to 1054MHz—Receive (RX)
    11. 7.11 861MHz to 1054MHz—Transmit (TX) 
    12. 7.12 861MHz to 1054MHz - PLL Phase Noise Wideband Mode
    13. 7.13 861MHz to 1054MHz - PLL Phase Noise Narrowband Mode
    14. 7.14 Timing and Switching Characteristics
      1. 7.14.1 Reset Timing
      2. 7.14.2 Wakeup Timing
      3. 7.14.3 Clock Specifications
        1. 7.14.3.1 48MHz Clock Input (TCXO)
        2. 7.14.3.2 48MHz Crystal Oscillator (XOSC_HF)
        3. 7.14.3.3 48MHz RC Oscillator (RCOSC_HF)
        4. 7.14.3.4 2MHz RC Oscillator (RCOSC_MF)
        5. 7.14.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 7.14.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 7.14.4 Serial Peripheral Interface (SPI) Characteristics
        1. 7.14.4.1 SPI Characteristics
        2. 7.14.4.2 SPI Master Mode
        3. 7.14.4.3 SPI Master Mode Timing Diagrams
        4. 7.14.4.4 SPI Slave Mode
        5. 7.14.4.5 SPI Slave Mode Timing Diagrams
      5. 7.14.5 UART
        1. 7.14.5.1 UART Characteristics
    15. 7.15 Peripheral Characteristics
      1. 7.15.1 ADC
        1. 7.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 7.15.2 DAC
        1. 7.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 7.15.3 Temperature and Battery Monitor
        1. 7.15.3.1 Temperature Sensor
        2. 7.15.3.2 Battery Monitor
      4. 7.15.4 Comparators
        1. 7.15.4.1 Low-Power Clocked Comparator
        2. 7.15.4.2 Continuous Time Comparator
      5. 7.15.5 Current Source
        1. 7.15.5.1 Programmable Current Source
      6. 7.15.6 GPIO
        1. 7.15.6.1 GPIO DC Characteristics
    16. 7.16 Typical Characteristics
      1. 7.16.1 MCU Current
      2. 7.16.2 RX Current
      3. 7.16.3 TX Current
      4. 7.16.4 RX Performance
      5. 7.16.5 TX Performance
      6. 7.16.6 ADC Performance
  9. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  System CPU
    3. 8.3  Radio (RF Core)
      1. 8.3.1 Proprietary Radio Formats
    4. 8.4  Memory
    5. 8.5  Sensor Controller
    6. 8.6  Cryptography
    7. 8.7  Timers
    8. 8.8  Serial Peripherals and I/O
    9. 8.9  Battery and Temperature Monitor
    10. 8.10 µDMA
    11. 8.11 Debug
    12. 8.12 Power Management
    13. 8.13 Clock Systems
    14. 8.14 Network Processor
  10. 9 Application, Implementation, and Layout
    1. 9.1 Reference Designs
    2. 9.2 Junction Temperature Calculation
  11. 10Device and Documentation Support
    1. 10.1 Tools and Software
      1. 10.1.1 SimpleLink™ Microcontroller Platform
    2. 10.2 Documentation Support
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

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7.7 Nonvolatile (Flash) Memory Characteristics

Over operating free-air temperature range and VDDS = 3.0V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Flash sector size 2 kB
Supported flash erase cycles before failure, full bank(1)(2) 30 k Cycles
Supported flash erase cycles before failure, single sector(3) 60 k Cycles
Maximum number of write operations per row before sector erase(4) 83 Write Operations
Flash retention 105 °C Tj 11.4 Years
Flash sector erase current Average delta current 1.0 mA
Flash sector erase time(5) Zero cycles 10 ms
30k cycles 4000 ms
(1) A full bank erase is counted as a single erase cycle on each sector.
(2) Aborting flash during erase or program modes is not a safe operation.
(3) Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k cycles.
(4) Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number of write operations per row is reached.
(5) This number is dependent on Flash aging and increases over time and erase cycles.