ZHCSPA6F September   2006  – January 2022

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: DC
    6. 6.6 Switching Characteristics: AC
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 1024-Bit EPROM
      2. 7.3.2 EPROM Status Memory
      3. 7.3.3 Error Checking
      4. 7.3.4 Customizing the BQ2022A
      5. 7.3.5 Bus Termination
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1  Serial Communication
      2. 7.5.2  Initialization
      3. 7.5.3  ROM Commands
        1. 7.5.3.1 READ ROM Command
        2. 7.5.3.2 SKIP ROM Command
      4. 7.5.4  Memory/Status Function Commands
      5. 7.5.5  READ MEMORY Commands
        1. 7.5.5.1 READ MEMORY/Page CRC
        2. 7.5.5.2 READ MEMORY/Field CRC
      6. 7.5.6  WRITE MEMORY Command
      7. 7.5.7  READ STATUS Command
      8. 7.5.8  WRITE STATUS Command
      9. 7.5.9  PROGRAM PROFILE Byte
      10. 7.5.10 SDQ Signaling
      11. 7.5.11 RESET and PRESENCE PULSE
      12. 7.5.12 WRITE Bit
      13. 7.5.13 READ Bit
      14. 7.5.14 PROGRAM PULSE
      15. 7.5.15 IDLE
      16. 7.5.16 CRC Generation
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Programming Circuit Example
        2. 8.2.2.2 SDQ Master Best Practices
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
      2. 11.2.2 接收文档更新通知
    3. 11.3 Trademarks
    4. 11.4 支持资源
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

EPROM Status Memory

In addition to the programmable 1024-bits of memory are 64 bits of status information contained in the EPROM STATUS memory. The STATUS memory is accessible with separate commands. The STATUS bits are EPROM and are read or programmed to indicate various conditions to the software interrogating the BQ2022A. The first byte of the STATUS memory contains the write protect page bits, that inhibit programming of the corresponding page in the 1024-bit main memory area if the appropriate write-protection bit is programmed. Once a bit has been programmed in the write protect page byte, the entire 32-byte page that corresponds to that bit can no longer be altered but may still be read. The write protect bits may be cleared by using the WRITE STATUS command.

The next four bytes of the EPROM STATUS memory contain the page address redirection bytes. Bits in the EPROM status bytes can indicate to the host what page is substituted for the page by the appropriate redirection byte. The hardware of the BQ2022A makes no decisions based on the contents of the page address redirection bytes. This feature allows the user's software to make a data patch to the EPROM by indicating that a particular page or pages should be replaced with those indicated in the page address redirection bytes. The ones complement of the new page address is written into the page address redirection byte that corresponds to the original (replaced) page. If a page address redirection byte has an FFh value, the data in the main memory that corresponds to that page are valid. If a page address redirection byte has some other hex value, the data in the page corresponding to that redirection byte are invalid, and the valid data can now be found at the ones complement of the page address indicated by the hexadecimal value stored in the associated page address redirection byte. A value of FDh in the redirection byte for page 1, for example, indicates that the updated data are now in page 2. The details for reading and programming the EPROM status memory portion of the BQ2022A are given in Section 7.5.4 section.

Table 7-2 EPROM Status Bytes
ADDRESS (HEX)PAGE
00hWrite protection bits
BIT0—write protect page 0
BIT1—write protect page 1
BIT2—write protect page 2
BIT3—write protect page 3
BIT4 to 7—bitmap of used pages
01hRedirection byte for page 0
02hRedirection byte for page 1
03hRedirection byte for page 2
04hRedirection byte for page 3
05hReserved
06hReserved
07hFactory programmed 00h