ZHCSPA6F September   2006  – January 2022

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: DC
    6. 6.6 Switching Characteristics: AC
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 1024-Bit EPROM
      2. 7.3.2 EPROM Status Memory
      3. 7.3.3 Error Checking
      4. 7.3.4 Customizing the BQ2022A
      5. 7.3.5 Bus Termination
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1  Serial Communication
      2. 7.5.2  Initialization
      3. 7.5.3  ROM Commands
        1. 7.5.3.1 READ ROM Command
        2. 7.5.3.2 SKIP ROM Command
      4. 7.5.4  Memory/Status Function Commands
      5. 7.5.5  READ MEMORY Commands
        1. 7.5.5.1 READ MEMORY/Page CRC
        2. 7.5.5.2 READ MEMORY/Field CRC
      6. 7.5.6  WRITE MEMORY Command
      7. 7.5.7  READ STATUS Command
      8. 7.5.8  WRITE STATUS Command
      9. 7.5.9  PROGRAM PROFILE Byte
      10. 7.5.10 SDQ Signaling
      11. 7.5.11 RESET and PRESENCE PULSE
      12. 7.5.12 WRITE Bit
      13. 7.5.13 READ Bit
      14. 7.5.14 PROGRAM PULSE
      15. 7.5.15 IDLE
      16. 7.5.16 CRC Generation
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Programming Circuit Example
        2. 8.2.2.2 SDQ Master Best Practices
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
      2. 11.2.2 接收文档更新通知
    3. 11.3 Trademarks
    4. 11.4 支持资源
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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READ MEMORY/Field CRC

To read memory without CRC generation on 32-byte page boundaries, the SKIP ROM command is followed by the READ MEMORY command, F0h, followed by the address low byte and then the address high byte.

Note:

As shown in Figure 7-4, individual bytes of address and data are transmitted LSB first.

An 8-bit CRC of the command byte and address bytes is computed by the BQ2022A and read back by the host to confirm that the correct command word and starting address were received. If the CRC read by the host is incorrect, a reset pulse must be issued and the entire sequence must be repeated. If the CRC received by the host is correct, the host issues read time slots and receives data from the BQ2022A starting at the initial address and continuing until the end of the 1024-bit data field is reached or until a reset pulse is issued. If reading occurs through the end of memory space, the host may issue eight additional read time slots and the BQ2022A responds with an 8-bit CRC of all data bytes read from the initial starting byte through the last byte of memory. After the CRC is received by the host, any subsequent read time slots appear as logical 1s until a reset pulse is issued. Any reads ended by a reset pulse prior to reaching the end of memory does not have the 8-bit CRC available.

Figure 7-4 READ MEMORY/Field CRC
Initialization and SKIP ROM Command
Sequence
READ MEMORY Command
F0h
Address Low
Byte
Address High
Byte
Read and Verify CRCRead EPROM Memory Until End of EPROM MemoryRead and
Verify CRC
A0A7A8A15