TRF0108-SEP
- Vendor item drawing number: VID V62/26604
- Radiation:
- Total ionizing dose (TID)
- Radiation hardness assurance (RHA) up to 30krad (Si) TID
- Enhanced low dose rate sensitivity (ELDRS) free process
- High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
- Single event effects (SEE)
- Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
- Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
- Total ionizing dose (TID)
- Space-enhanced plastic (Space EP, SEP)
- Lead-free construction
- Extended temperature range: –55°C to +125°C
- Differential to single-ended (D2S) RF amplifier
- Near-DC to 12GHz
- Gain: 15.2dB at 2GHz
- OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
- OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
- NF: 10.9dB (2GHz), 12.1dB (6GHz)
- HD2 (1GHz): –57dBc at 2dBm
- HD3 (1GHz): –57dBc at 2dBm
- Additive (residual) phase noise (1GHz):
- –154.6dBc/Hz at 10kHz offset
- Gain and phase imbalance: ±0.6dB and ±3º
- Differential input matched to 100Ω, Single-ended output matched to 50Ω
- Power-down feature
- 5V supply
- Active current: 170mA
The TRF0108-SEP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SEP or AFE7950-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.
The TRF0108-SEP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | TRF0108-SEP Radiation-Tolerant, Near-DC to 12GHz, Differential to Single-Ended RF Amplifier datasheet | PDF | HTML | 2025年 12月 23日 |
| * | Radiation & reliability report | TRF0108-SEP Single-Event Effects (SEE) Radiation Report | PDF | HTML | 2026年 3月 30日 |
| * | Radiation & reliability report | TRF0108-SEP Total Ionizing Dose (TID) Report | 2026年 3月 30日 | |
| Selection guide | TI Space Products (Rev. L) | 2026年 3月 27日 |
設計與開發
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TRF0108SEP-EVM — TRF0108SEP/SP 評估模組
TRF0108SP 與 TRF0108SEP 評估模組 (EVM) 分別用於評估 TRF0108-SP 與 TRF0108-SEP 裝置,兩者皆為差動輸入轉單端 (D2S) 輸出的 RF 放大器。TRF0108SP-EVM 通過抗輻射保證 (RHA) 認證,而 TRF0108SEP-EVM 則具備耐輻射能力。這些裝置專為需要由數位類比轉換器 (DAC) 驅動並執行 D2S 功能的應用而設計。
TIDA-010274 — 航太級離散式 RF 取樣收發器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| — (—) | — |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。