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UCC5350-Q1

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汽车级 3kVrms/5kVrms 10A/10A 单通道隔离式驱动器，带米勒钳位，8V/12V UVLO

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UCC5350-Q1

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产品详情

Number of channels 1 Isolation rating Basic, Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 700, 1500 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Split output Output VCC/VDD (min) (V) 9.5 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12 TI functional safety category Functional Safety-Capable
Number of channels 1 Isolation rating Basic, Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 700, 1500 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Split output Output VCC/VDD (min) (V) 9.5 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12 TI functional safety category Functional Safety-Capable
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) SOIC (DWV) 8 67.275 mm² (5.85 mm × 11.5 mm)
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 componenet recognition program
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 componenet recognition program
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C

The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.
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技术文档

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC5350-Q1 Single-Channel Isolated Gate Driver 数据表 (Rev. G) PDF | HTML 2025-1-9
证书 VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. AA) 2026-6-11
应用简报 我的设计是否需要米勒钳位？ PDF | HTML 英语版 PDF | HTML 2025-1-6
应用手册 OBC DC/DC SiC MOSFET驱动选型及供电设计要点 2023-1-13
应用简报 栅极驱动电路中铁氧体磁珠的使用和优势 PDF | HTML 英语版 PDF | HTML 2022-11-14
功能安全信息 UCC5390-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 2022-3-16
技术文章 Increasing power density with an integrated GaN solution PDF | HTML 2022-3-14

设计与开发

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评估板

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UCC5320SCEVM 是用于评估 UCC53xx 系列器件的评估模块，用户可根据所用的器件灵活地将驱动器配置为分离输出、米勒箝位或 UVLO。此 EVM 具有足够的测试点和跳线选项，支持使用超少的外部元件来评估相应器件。
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用户指南: PDF
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评估板

UCC5390SCDEVM-010 — 紧凑型单通道 3kVrms 隔离式 17A 栅极驱动器偏置电源评估模块

UCC5390SCDEVM-010 是完整的单通道隔离式栅极驱动板，包含可重新配置的偏置电源，可提供各种驱动电压。该 EVM 基于采用 SOIC-8 封装的 17A 分离输出基本绝缘 UCC5390SCD 驱动器。该设计还包含基于 SN6505B 的偏置电源，该偏置电源可以针对 11V 至 33V 的单个或分离轨驱动电压进行配置，涵盖各种 Si 和 SiC FET 与 IGBT。
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仿真模型

UCC5350MCD PSpice Transient Model (Rev. A)

SLLM368A.ZIP (54 KB) - PSpice 模型
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仿真模型

UCC5350MCD Unencrypted PSpice Transient Model (Rev. A)

SLLM367A.ZIP (3 KB) - PSpice 模型
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仿真模型

UCC5350SBD PSpice Transient Model

SLLM379.ZIP (53 KB) - PSpice 模型
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仿真模型

UCC5350SBD Unencrypted PSpice Transient Model

SLLM378.ZIP (3 KB) - PSpice 模型
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计算工具

SLURAY7 — UCC53x0 Gate Resistor and Thermal Calculator Tool

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封装 引脚 CAD 符号、封装和 3D 模型
SOIC (D) 8 Ultra Librarian
SOIC (DWV) 8 Ultra Librarian
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