TPS28226
- Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
- Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
- Wide Power System Train Input Voltage: 3 V Up to 27 V
- Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
- Capable to Drive MOSFETs with ≥40-A Current per Phase
- High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
- Capable to Propagate <30-ns Input PWM Pulses
- Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
- 3-State PWM Input for Power Stage Shutdown
- Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
- Thermal Shutdown
- UVLO Protection
- Internal Bootstrap Diode
- Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
- High Performance Replacement for Popular 3-State Input Drivers
The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
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技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 数据表 (Rev. A) | PDF | HTML | 2014-11-26 | ||
| 应用手册 | 使用半桥栅极驱动器实现高侧 FET 的 100% 占空比 | PDF | HTML | 英语版 | PDF | HTML | 2024-3-26 | |
| 应用手册 | 针对半桥配置的自举电路选择 (Rev. A) | PDF | HTML | 英语版 (Rev.A) | PDF | HTML | 2023-9-14 | |
| 应用手册 | 比较分析两种不同的可提高栅极驱动电流的方法 (Rev. A) | PDF | HTML | 英语版 (Rev.A) | PDF | HTML | 2022-4-1 | |
| 应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018-10-29 | ||||
| 选择指南 | 电源管理指南 2018 | 2018-7-31 | ||||
| 更多文献资料 | Power Loss Calculation for Sync Buck Converter | 2007-2-14 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VSON (DRB) | 8 | Ultra Librarian |
| SOIC (D) | 8 | Ultra Librarian |
订购和质量
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