LM5112
- LM5112-Q1 is Qualified for Automotive Applications
- AEC-Q100 Grade 1 Qualified
- Manufactured on an Automotive Grade Flow
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7-A Sink and 3-A Source Current
- Fast Propagation Times: 25 ns (Typical)
- Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load - Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
- Supply Rail Undervoltage Lockout Protection
- Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation - Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package - Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 数据表 (Rev. C) | PDF | HTML | 2015-10-22 | ||
| 应用手册 | 不同功率因数校正 (PFC) 拓扑的栅极驱动器需求综述 | PDF | HTML | 英语版 | PDF | HTML | 2024-1-23 | |
| 应用手册 | 使用单输出栅极驱动器实现高侧或低侧驱动 (Rev. B) | PDF | HTML | 英语版 (Rev.B) | PDF | HTML | 2023-9-13 | |
| 应用手册 | 紧凑、强大且稳健的低侧栅极驱动器的优势 | PDF | HTML | 英语版 | PDF | HTML | 2022-9-23 | |
| 应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用简报 | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019-1-18 | ||||
| 更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018-10-29 | ||||
| 选择指南 | 电源管理指南 2018 | 2018-7-31 | ||||
| 应用简报 | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018-3-16 | ||||
| 应用手册 | An Alternative Approach to Higher-Power Boost Converters | 2009-11-30 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
UCC27423-4-5-Q1EVM — UCC2742xQ1 具有使能端的双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| WSON (NGG) | 6 | Ultra Librarian |
| HVSSOP (DGN) | 8 | Ultra Librarian |
订购和质量
推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。