LM5109
- Drives both a high side and low side N-Channel MOSFET
- 1A peak output current (1.0A sink / 1.0A source)
- Independent TTL compatible inputs
- Bootstrap supply voltage to 118V DC
- Fast propagation times (27 ns typical)
- Drives 1000 pF load with 15ns rise and fall times
- Excellent propagation delay matching (2 ns typical)
- Supply rail under-voltage lockout
- Low power consumption
- Pin compatible with ISL6700
The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.
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| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LM5109 100V / 1A Peak Half Bridge Gate Driver 数据表 | 2005-4-26 | |||
| 应用手册 | 使用半桥栅极驱动器实现高侧 FET 的 100% 占空比 | PDF | HTML | 英语版 | PDF | HTML | 2024-3-26 | |
| 应用手册 | 针对半桥配置的自举电路选择 (Rev. A) | PDF | HTML | 英语版 (Rev.A) | PDF | HTML | 2023-9-14 | |
| 应用手册 | 比较分析两种不同的可提高栅极驱动电流的方法 (Rev. A) | PDF | HTML | 英语版 (Rev.A) | PDF | HTML | 2022-4-1 | |
| 应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 白皮书 | Power Electronics in Motor Drives: Where is it? (Rev. A) | 2019-10-1 | ||||
| 更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018-10-29 |
设计与开发
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| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
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