LM5110

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具有 4V UVLO、专用输入接地和关断输入的 5A/3A 双通道栅极驱动器

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UCC27624 正在供货 具有 4V UVLO、30V VDD 和低传播延迟的 5A/5A 双通道栅极驱动器 Wide VDD and higher driver current

产品详情

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DPR) 10 16 mm² 4 x 4
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

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UCC27524A 正在供货 具有 5V UVLO、使能功能和负输入电压处理能力的 5A/5A 双通道栅极驱动器 This product has higher drive current with 5-A sink/source, as well as faster propagation delay (13-ns) , rise time (7-ns) and fall time (6-ns).

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类型 标题 下载最新的英语版本 日期
* 数据表 LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 数据表 (Rev. B) PDF | HTML 2012年 11月 5日
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
选择指南 电源管理指南 2018 (Rev. K) 2018年 7月 31日
选择指南 电源管理指南 2018 (Rev. R) 2018年 6月 25日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日

设计和开发

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评估板

UCC27423-4-5-Q1EVM — 具有使能端的 UCC2742xQ1 双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)

UCC2742xQ1 EVM 是一款高速双 MOSFET 评估模块,其提供了用于快速轻松地启动 UCC2742xQ1 驱动器的测试平台。由 4V 到 15V 外部单电源供电,具有一整套测试点和跳线。所有器件均具有独立的输入和输出线路,且所有器件均共享一个共用接地。提供使能 (ENBL) 功能旨在更好地控制驱动器应用的操作,器件的驱动器信号可通过同一使能引脚启用或禁用。
用户指南: PDF
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仿真模型

LM5110-1M PSpice Transient Model (Rev. A)

SNVM295A.ZIP (57 KB) - PSpice Model
仿真模型

LM5110-1M TINA-TI Transient Reference Design

SNVM406.TSC (135 KB) - TINA-TI Reference Design
仿真模型

LM5110-1M TINA-TI Transient Spice Model

SNVM407.ZIP (10 KB) - TINA-TI Spice Model
仿真模型

LM5110-2M PSpice Transient Model

SNVM308.ZIP (47 KB) - PSpice Model
仿真模型

LM5110-2M TINA-TI Transient Reference Design

SNVM408.TSC (135 KB) - TINA-TI Reference Design
仿真模型

LM5110-2M TINA-TI Transient Spice Model

SNVM409.ZIP (10 KB) - TINA-TI Spice Model
仿真模型

LM5110-3M PSpice Transient Model

SNVM309.ZIP (47 KB) - PSpice Model
仿真模型

LM5110-3M TINA-TI Transient Reference Design

SNVM412.TSC (136 KB) - TINA-TI Reference Design
仿真模型

LM5110-3M TINA-TI Transient Spice Model

SNVM413.ZIP (10 KB) - TINA-TI Spice Model
仿真模型

LM5110_1M Unencrypted PSpice Transient Model

SNVMAD0.ZIP (1 KB) - PSpice Model
仿真模型

LM5110_2M Unencrypted PSpice Transient Model

SNVMAC9.ZIP (1 KB) - PSpice Model
仿真模型

LM5110_3M Unencrypted PSpice Transient Model

SNVMAD1.ZIP (1 KB) - PSpice Model
模拟工具

PSPICE-FOR-TI — 适用于 TI 设计和模拟工具的 PSpice®

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用,包括业内超大的模型库之一,涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库,您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案,然后再进行布局和制造,可缩短产品上市时间并降低开发成本。

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封装 引脚 下载
SOIC (D) 8 查看选项
WSON (DPR) 10 查看选项

订购和质量

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  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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  • 制造厂地点
  • 封装厂地点

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