ZHCSNG8B February   2021  – September 2022 CC2652RSIP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Functional Block Diagram
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Signal Descriptions – SIP Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 Bluetooth Low Energy - Receive (RX)
    11. 8.11 Bluetooth Low Energy - Transmit (TX)
    12. 8.12 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    13. 8.13 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    14. 8.14 Timing and Switching Characteristics
      1. 8.14.1 Reset Timing
      2. 8.14.2 Wakeup Timing
      3. 8.14.3 Clock Specifications
        1. 8.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.14.3.3 2 MHz RC Oscillator (RCOSC_MF)
        4. 8.14.3.4 32.768 kHz Crystal Oscillator (XOSC_LF)
        5. 8.14.3.5 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       36
      5. 8.14.5 UART
        1.       38
    15. 8.15 Peripheral Characteristics
      1. 8.15.1 ADC
        1.       Analog-to-Digital Converter (ADC) Characteristics
      2. 8.15.2 DAC
        1. 8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.15.3 Temperature and Battery Monitor
        1. 8.15.3.1 Temperature Sensor
        2. 8.15.3.2 Battery Monitor
      4. 8.15.4 Comparators
        1. 8.15.4.1 Low-Power Clocked Comparator
        2. 8.15.4.2 Continuous Time Comparator
      5. 8.15.5 Current Source
        1. 8.15.5.1 Programmable Current Source
      6. 8.15.6 GPIO
        1. 8.15.6.1 GPIO DC Characteristics
    16. 8.16 Typical Characteristics
      1. 8.16.1 MCU Current
      2. 8.16.2 RX Current
      3. 8.16.3 TX Current
      4. 8.16.4 RX Performance
      5. 8.16.5 TX Performance
      6. 8.16.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Bluetooth 5.2 Low Energy
      2. 9.3.2 802.15.4 (Thread, Zigbee, 6LoWPAN)
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
    15. 9.15 Device Certification and Qualification
      1. 9.15.1 FCC Certification and Statement
      2. 9.15.2 IC/ISED Certification and Statement
      3. 9.15.3 ETSI/CE Certification
      4. 9.15.4 UK Certification
    16. 9.16 Module Markings
    17. 9.17 End Product Labeling
    18. 9.18 Manual Information to the End User
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
      1. 10.1.1 Typical Application Circuit
    2. 10.2 Device Connection and Layout Fundamentals
      1. 10.2.1 Reset
      2. 10.2.2 Unused Pins
    3. 10.3 PCB Layout Guidelines
      1. 10.3.1 General Layout Recommendations
      2. 10.3.2 RF Layout Recommendations
        1. 10.3.2.1 Antenna Placement and Routing
        2. 10.3.2.2 Transmission Line Considerations
    4. 10.4 Reference Designs
    5. 10.5 Junction Temperature Calculation
  11. 11Environmental Requirements and SMT Specifications
    1. 11.1 PCB Bending
    2. 11.2 Handling Environment
      1. 11.2.1 Terminals
      2. 11.2.2 Falling
    3. 11.3 Storage Condition
      1. 11.3.1 Moisture Barrier Bag Before Opened
      2. 11.3.2 Moisture Barrier Bag Open
    4. 11.4 PCB Assembly Guide
      1. 11.4.1 PCB Land Pattern & Thermal Vias
      2. 11.4.2 SMT Assembly Recommendations
      3. 11.4.3 PCB Surface Finish Requirements
      4. 11.4.4 Solder Stencil
      5. 11.4.5 Package Placement
      6. 11.4.6 Solder Joint Inspection
      7. 11.4.7 Rework and Replacement
      8. 11.4.8 Solder Joint Voiding
    5. 11.5 Baking Conditions
    6. 11.6 Soldering and Reflow Condition
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Tools and Software
      1. 12.2.1 SimpleLink™ Microcontroller Platform
    3. 12.3 Documentation Support
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information

8.7 Nonvolatile (Flash) Memory Characteristics

Over operating free-air temperature range and VDDS = 3.0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Flash sector size 8 KB
Supported flash erase cycles before failure, full bank(1)(5) 30 k Cycles
Supported flash erase cycles before failure, single sector(2) 60 k Cycles
Maximum number of write operations per row before sector erase(3) 83 Write Operations
Flash retention 105 °C 11.4 Years
Flash sector erase current Average delta current 9.7 mA
Flash sector erase time(4) Zero cycles 10 ms
30k cycles 4000 ms
Flash write current Average delta current, 4 bytes at a time 5.3 mA
Flash write time(4) 4 bytes at a time 21.6 µs
(1) A full bank erase is counted as a single erase cycle on each sector
(2) Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k cycles
(3) Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number of write operations per row is reached.
(4) This number is dependent on Flash aging and increases over time and erase cycles
(5) Aborting flash during erase or program modes is not a safe operation.